H10D 12/212
Having pn junction gates
Official title: {having PN junction gates, e.g. field controlled diodes}
H10D12/212 (Having pn junction gates) appears on 165 US grants and 59 published applications in this corpus.
Search patents in H10D- Granted patents
- 165
- Published applications
- 59
- Assignees
- 69
- Inventors
- 214
- Latest grant
- 22 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 2 | 0 |
| 1978 | 1 | 0 |
| 1979 | 3 | 0 |
| 1980 | 2 | 0 |
| 1981 | 0 | 0 |
| 1982 | 7 | 0 |
| 1983 | 1 | 0 |
| 1984 | 2 | 0 |
| 1985 | 1 | 0 |
| 1986 | 10 | 0 |
| 1987 | 4 | 0 |
| 1988 | 2 | 0 |
| 1989 | 14 | 0 |
| 1990 | 8 | 0 |
| 1991 | 6 | 0 |
| 1992 | 6 | 0 |
| 1993 | 4 | 0 |
| 1994 | 6 | 0 |
| 1995 | 6 | 0 |
| 1996 | 4 | 0 |
| 1997 | 5 | 0 |
| 1998 | 5 | 0 |
| 1999 | 6 | 0 |
| 2000 | 5 | 0 |
| 2001 | 5 | 1 |
| 2002 | 4 | 0 |
| 2003 | 2 | 3 |
| 2004 | 1 | 2 |
| 2005 | 1 | 6 |
| 2006 | 5 | 6 |
| 2007 | 1 | 0 |
| 2008 | 3 | 0 |
| 2009 | 3 | 3 |
| 2010 | 0 | 1 |
| 2011 | 1 | 2 |
| 2012 | 0 | 0 |
| 2013 | 4 | 6 |
| 2014 | 3 | 3 |
| 2015 | 3 | 2 |
| 2016 | 3 | 2 |
| 2017 | 3 | 4 |
| 2018 | 2 | 0 |
| 2019 | 1 | 3 |
| 2020 | 1 | 1 |
| 2021 | 2 | 3 |
| 2022 | 0 | 1 |
| 2023 | 3 | 1 |
| 2024 | 3 | 1 |
| 2025 | 0 | 4 |
| 2026 | 1 | 4 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Gate-controlled diode and electronic circuit22 Sep 2026US 12,745,410 B2Mitsubishi Electric Corporation
- Power semiconductor device with reduced loss and manufacturing method the same10 Sep 2024US 12,087,848 B2Trinno Technology Co., Ltd.
- Vertical semiconductor structure with integrated sampling structure and method for manufacturing same23 Jul 2024US 12,046,664 B2Wuxi China Resources Huajing Microelectronics Co., Ltd.
- Oxide field trench (OFT) diode control device9 Jan 2024US 11,869,959 B2STMicroelectronics (Tours) SAS
- Method for manufacturing semiconductor device27 Jun 2023US 11,688,771 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device24 Sep 2026US 2026/0293288 A1Mitsubishi Electric Corporation
- Semiconductor device10 Sep 2026US 2026/0271314 A1Mitsubishi Electric Corporation
- Semiconductor diode structure and method for forming the same21 May 2026US 2026/0143820 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device8 Jan 2026US 2026/0013160 A1Rohm Co., Ltd.
- Silicon carbide device with trench gate16 Oct 2025US 2025/0324714 A1Infineon Technologies AG
Most cited
By later US patents
- Semiconductor power devices with alternating conductivity type high-voltage breakdown regions484US 5,216,275 AUniversity of Electronic Science and Technology of China · 1993
- Semiconductor structure comprising a highly doped conductive channel region and method for producing a semiconductor structure122US 7,615,802 B2SiCED Electronics Development GmbH & Co. KG · 2009
- Static induction semiconductor device with a distributed main electrode structure and static induction semiconductor device with a static induction main electrode shorted structure98US 5,418,376 AToyo Denki Seizo Kabushiki Kaisha · 1995
- Double gate static induction thyristor97US 5,027,180 AMitsubishi Electric Corporation · 1991
- Static-induction transistors having heterojunction gates and methods of forming same57US 5,753,938 ANorth Carolina State University · 1998