Method for manufacturing semiconductor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorAryan Afzalian
Life of this patent
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Abstract
A method for manufacturing a semiconductor device includes forming a source and region in a substrate. A core channel region is formed adjacent the source region. A barrier layer is formed adjacent the core channel region. A drain region is formed in the substrate such that the barrier layer is between the core channel region and the drain region. A first portion of a shell is formed along the core channel region. A second portion of the shell is formed along the barrier layer. The second portion of the shell includes a different material than the first portion of the shell.
Claims20
A method comprising:
- forming a source region in a substrate;
- forming a core channel region adjacent the source region;
- forming a barrier layer adjacent the core channel region;
- forming a drain region in the substrate such that the barrier layer is between the core channel region and the drain region;
- forming a first portion of a shell along the core channel region;
- and
- forming a second portion of the shell along the barrier layer that includes a different material than the first portion of the shell.
A method comprising:
- forming a source region over a substrate;
- forming a core channel region adjacent the source region;
- forming a barrier layer adjacent the core channel region;
- forming a drain region adjacent the barrier layer such that the barrier layer is between the core channel region and the drain region, and the core channel region is between the source region and the barrier layer;
- forming a shell region over the core channel region and the barrier layer;
- and
- forming a gate stack over the shell region, wherein the gate stack has a portion directly over the drain region.
A method comprising:
- forming a source region in a substrate;
- forming a core channel region on the source region;
- forming a barrier layer on the core channel region;
- forming a drain region on the barrier layer;
- forming a shell lining sidewalls of the core channel region and sidewalk the barrier layer;
- forming a first gate structure to laterally surround the core channel region and a bottom of the barrier layer;
- and
- forming a second gate structure to laterally surround a top of the barrier layer.
Dependencies are inferred from the claim text.