Power semiconductor device with reduced loss and manufacturing method the same

A power semiconductor device, comprising:

• a first drift region of a first conductivity type;
• a second drift region of the first conductivity type formed by epitaxially growing on the first drift region;
• a plurality of buried ion regions of a second conductivity type formed to be buried in the second drift region, wherein the plurality of buried ion regions result in increasing an amount of ions of the second conductivity type in the second drift region;
• a plurality of deep ion regions of the second conductivity type, extending from an upper surface of the second drift region to be in contact with the plurality of buried ion regions, respectively, and being spaced apart from each other by a predetermined width of an active cell group in the lateral direction, wherein the plurality of deep ion regions are shorted to an emitter electrode;
• wherein each of the plurality of buried ion regions is formed with a predetermined extension length in a lateral direction extending laterally from at least one side of a respective one of the plurality of deep ion regions, and is disposed to be spaced apart from an adjacent one of the plurality of buried ion regions in the lateral direction by a predetermined separation value,
• wherein the second drift region is epitaxially grown with a relatively higher ion concentration than that of the first drift region by the increased amount of ions of the second conductivity type caused by the plurality of buried ion regions;
• a plurality of gate trenches being spaced apart from each other between adjacent ones of the deep ion regions and being formed from the upper surface of the second drift region to a depth not in contact with the plurality of buried ion regions;
• and
• a body region of the second conductivity type being formed in a region between adjacent ones of the plurality of gate trenches and a region between the plurality of gate trenches and the plurality of deep ion regions.