Semiconductor device
AssigneeMitsubishi Electric Corporation
InventorsAyanori GATTO, Shinya SONEDA
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Abstract
An object is to provide a technique capable of increasing a degree of freedom in designing a trench while suppressing an erroneous operation. A semiconductor device includes: an upper polysilicon layer provided to an upper part of a trench; and a lower polysilicon layer provided to a lower part of the trench and insulated from the upper polysilicon layer by an insulating film, wherein the upper polysilicon layer is electrically connected to a gate electrode, the lower polysilicon layer and the second semiconductor layer are electrically connected to an anode electrode, and a lower end of the second semiconductor layer is located below a lower end of the upper polysilicon layer.
Claims6
A semiconductor device, comprising:
- a first semiconductor layer of a first conductivity type;
- a second semiconductor layer of a second conductivity type provided on an upper side of the first semiconductor layer;
- an insulating film provided on a trench with an opening in an upper surface of the second semiconductor layer and provided between an upper part and a lower part of the trench;
- an upper polysilicon layer provided to the upper part of the trench;
- and
- a lower polysilicon layer provided to the lower part of the trench and insulated from the upper polysilicon layer by the insulating film, wherein
- the upper polysilicon layer is electrically connected to a gate electrode,
- the lower polysilicon layer and the second semiconductor layer are electrically connected to an anode electrode, and
- a lower end of the second semiconductor layer is located below a lower end of the upper polysilicon layer.
Dependencies are inferred from the claim text.