H10B 10/12
Comprising a mosfet load element
Official title: {comprising a MOSFET load element}
H10B10/12 (Comprising a mosfet load element) appears on 4,330 US grants and 4,626 published applications in this corpus.
Search patents in H10B- Granted patents
- 4,330
- Published applications
- 4,626
- Assignees
- 410
- Inventors
- 4,464
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1978 | 1 | 0 |
| 1979 | 4 | 0 |
| 1980 | 2 | 0 |
| 1981 | 3 | 0 |
| 1982 | 3 | 0 |
| 1983 | 1 | 0 |
| 1984 | 3 | 0 |
| 1985 | 7 | 0 |
| 1986 | 6 | 0 |
| 1987 | 6 | 0 |
| 1988 | 7 | 0 |
| 1989 | 12 | 0 |
| 1990 | 11 | 0 |
| 1991 | 17 | 0 |
| 1992 | 21 | 0 |
| 1993 | 24 | 0 |
| 1994 | 59 | 0 |
| 1995 | 48 | 0 |
| 1996 | 61 | 0 |
| 1997 | 54 | 0 |
| 1998 | 81 | 0 |
| 1999 | 62 | 0 |
| 2000 | 60 | 0 |
| 2001 | 58 | 29 |
| 2002 | 55 | 79 |
| 2003 | 72 | 68 |
| 2004 | 69 | 100 |
| 2005 | 71 | 97 |
| 2006 | 72 | 115 |
| 2007 | 80 | 122 |
| 2008 | 81 | 104 |
| 2009 | 77 | 110 |
| 2010 | 99 | 128 |
| 2011 | 91 | 111 |
| 2012 | 105 | 114 |
| 2013 | 126 | 138 |
| 2014 | 153 | 130 |
| 2015 | 158 | 173 |
| 2016 | 181 | 195 |
| 2017 | 218 | 233 |
| 2018 | 246 | 206 |
| 2019 | 259 | 286 |
| 2020 | 247 | 301 |
| 2021 | 229 | 269 |
| 2022 | 208 | 264 |
| 2023 | 218 | 285 |
| 2024 | 232 | 300 |
| 2025 | 226 | 340 |
| 2026 | 146 | 329 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Memory devices with RC tracking and methods for operating the same6 Oct 2026US 12,755,780 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device having an asymmetric fin-type patterns formed between two symmetric fin-type patterns with varying width along center vertical line of the fins6 Oct 2026US 12,757,368 B2Samsung Electronics Co., Ltd.
- Semiconductor device6 Oct 2026US 12,757,369 B2Taiwan Semiconductor Manufacturing Company.Ltd
- SRAM with staggered stacked FET6 Oct 2026US 12,757,370 B2International Business Machines Corporation
- Vertical transistors with backside power delivery6 Oct 2026US 12,757,371 B2Apple Inc.
- Memory device8 Oct 2026US 2026/0311751 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Fly shared bit line on 4-cpp static random access memory (sram) cell and array8 Oct 2026US 2026/0311753 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Varying the po space in semiconductor layouts8 Oct 2026US 2026/0313864 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor devices and methods of fabricating the same8 Oct 2026US 2026/0313865 A1Samsung Electronics Co., Ltd.
- Memory device with alternating metal lines8 Oct 2026US 2026/0313866 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Contact plugs in SRAM cells and the method of forming the same1,465US 9,236,300 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Semiconductor capacitively-coupled NDR device and its applications in high-density high-speed memories and in power switches538US 6,229,161 B1Stanford University · 2001
- Method for making a three-dimensional integrated circuit structure481US 7,052,941 B22006
- Layout for multiple-fin SRAM cell436US 8,399,931 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2013
- Integrated circuit having both vertical and horizontal devices and process for making the same405US 5,554,870 AMotorola, Inc. · 1996