H01S 5/0215
Bonding to the substrate
Official title: {Bonding to the substrate}
H01S5/0215 (Bonding to the substrate) appears on 488 US grants and 559 published applications in this corpus.
Search patents in H01S- Granted patents
- 488
- Published applications
- 559
- Assignees
- 228
- Inventors
- 914
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1993 | 1 | 0 |
| 1994 | 5 | 0 |
| 1995 | 4 | 0 |
| 1996 | 4 | 0 |
| 1997 | 4 | 0 |
| 1998 | 9 | 0 |
| 1999 | 7 | 0 |
| 2000 | 4 | 0 |
| 2001 | 9 | 5 |
| 2002 | 8 | 16 |
| 2003 | 16 | 22 |
| 2004 | 17 | 10 |
| 2005 | 15 | 13 |
| 2006 | 5 | 7 |
| 2007 | 1 | 14 |
| 2008 | 3 | 13 |
| 2009 | 8 | 19 |
| 2010 | 12 | 16 |
| 2011 | 13 | 13 |
| 2012 | 16 | 7 |
| 2013 | 11 | 8 |
| 2014 | 9 | 19 |
| 2015 | 24 | 23 |
| 2016 | 18 | 12 |
| 2017 | 16 | 21 |
| 2018 | 17 | 34 |
| 2019 | 36 | 37 |
| 2020 | 40 | 49 |
| 2021 | 33 | 53 |
| 2022 | 32 | 37 |
| 2023 | 31 | 35 |
| 2024 | 27 | 39 |
| 2025 | 18 | 26 |
| 2026 | 15 | 11 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Ensemble light source6 Oct 2026US 12,756,150 B1KYOCERA SLD Laser, Inc.
- Semiconductor laser device29 Sep 2026US 12,749,867 B2Nuvoton Technology Corporation Japan
- Optoelectronic device comprising a III-V semiconductor membrane laser source forming a lateral p-i-n junction1 Sep 2026US 12,726,001 B2Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Quantum cascade element25 Aug 2026US 12,719,239 B2Kabushiki Kaisha Toshiba
- Semiconductor package having ground bonding wire that crosses over signal bonding wire for crosstalk reduction and associated method7 Jul 2026US 12,676,449 B2Airoha Technology Corp.
- Electronic device10 Sep 2026US 2026/0269559 A1Sony Semiconductor Solutions Corporation
- Method for manufacturing light emitting device, bonding method, and light emitting device3 Sep 2026US 2026/0261092 A1Nichia Corporation
- A vcsel with self-aligned microlens to improve beam divergence13 Aug 2026US 2026/0237971 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Surface-emitting laser and surface-emitting laser array6 Aug 2026US 2026/0229847 A1Sony Group Corporation
- Semiconductor laser and method for producing a semiconductor laser30 Jul 2026US 2026/0221723 A1ams-OSRAM International GmbH
Most cited
By later US patents
- Processes for lift-off of thin film materials or devices for fabricating three dimensional integrated circuits, optical detectors, and micromechanical devices287US 5,401,983 AGeorgia Tech Research Corporation · 1995
- Method and apparatus for fabricating self-assembling microstructures258US 5,824,186 AThe Regents of the University of California · 1998
- III-nitride light emitting devices fabricated by substrate removal250US 6,800,500 B2Lumileds Lighting U.S., LLC · 2004
- Hybrid III-V silicon laser formed by direct bonding247US 8,620,164 B2Intel Corporation · 2013
- Structure and method for separation and transfer of semiconductor thin films onto dissimilar substrate materials180US 6,562,648 B1Xerox Corporation · 2003