Semiconductor laser device

A semiconductor laser device comprising:

• a submount;
• a semiconductor laser element;
• and
• a bonding material that bonds the submount and the semiconductor laser element, wherein
• the semiconductor laser element includes a substrate and a layered structure laminated above a main surface of the substrate, and is disposed with the layered structure facing the submount,
• the layered structure includes a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer laminated in stated order on the substrate,
• a waveguide extending in a first direction parallel to the main surface of the substrate is formed in the layered structure,
• in a cross section perpendicular to the first direction, the bonding material includes:
• an inner region bonded to the semiconductor laser element;
• and
• among regions located outward of the inner region, one outer region located on a side of the inner region that corresponds to one side surface of the semiconductor laser element and an other outer region located on a side of the inner region that corresponds to an other side surface of the semiconductor laser element,
• the one outer region includes a region located outward of the one side surface,
• the other outer region includes a region located outward of the other side surface,
• the one outer region is spaced apart from a point on an end of the semiconductor laser element, the end being in a second direction, the point being located on a line extending in the second direction and passing through a point, on the layered structure, that is closest to the submount the second direction being perpendicular to the first direction and parallel to the main surface of the substrate,
• at the one side surface, the semiconductor laser element includes a first stepped portion formed at an end portion closer to the submount, and at the other side surface, includes a second stepped portion formed at an end portion closer to the submount,
• the semiconductor laser element and the bonding material are spaced apart at the first stepped portion and the second stepped portion,
• a maximum thickness t13 of the bonding material in the one outer region and a distance t12 between the first stepped portion and a surface of the bonding material that faces the submount satisfy t13≤t12, and
• a maximum thickness t17 of the bonding material in the other outer region and a distance t16 between the second stepped portion and a surface of the bonding material that faces the submount satisfy t17≤t16.

A semiconductor laser device comprising:

• a submount;
• a semiconductor laser element;
• and
• a bonding material that bonds the submount and the semiconductor laser element, wherein
• the semiconductor laser element includes a substrate and a layered structure laminated above a main surface of the substrate, and is disposed with the layered structure facing the submount,
• the layered structure includes a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer laminated in stated order on the substrate,
• a waveguide extending in a first direction parallel to the main surface of the substrate is formed in the layered structure,
• in a cross section perpendicular to the first direction, the bonding material includes:
• an inner region bonded to the semiconductor laser element;
• and
• among regions located outward of the inner region, one outer region located on a side of the inner region that corresponds to one side surface of the semiconductor laser element and an other outer region located on a side of the inner region that corresponds to an other side surface of the semiconductor laser element,
• the one outer region includes a region located outward of the one side surface,
• the other outer region includes a region located outward of the other side surface,
• the one outer region is spaced apart from a point on an end of the semiconductor laser element, the end being in a second direction, the point being located on a line extending in the second direction and passing through a point, on the layered structure, that is closest to the submount, the second direction being perpendicular to the first direction and parallel to the main surface of the substrate,
• at the one side surface, the semiconductor laser element includes a first stepped portion formed at an end portion closer to the submount, and at the other side surface, includes a second stepped portion formed at an end portion closer to the submount,
• the semiconductor laser element and the bonding material are spaced apart at the first stepped portion and the second stepped portion,
• the bonding material in the inner region has a maximum thickness at a position closer to the other side surface than to the one side surface and a minimum thickness at a position closer to the one side surface than to the other side surface, and
• a maximum thickness t15 of the bonding material in the inner region, a minimum thickness t11 of the bonding material in the inner region, a thickness t14 of the bonding material at an outer edge portion of the one outer region, and a thickness t18 of the bonding material at an outer edge portion of the other outer region satisfy at least one of t11≥t14/1.5 or t15≥t18/1.5.

A semiconductor laser device comprising:

• a submount;
• a semiconductor laser element;
• and
• a bonding material that bonds the submount and the semiconductor laser element, wherein
• the semiconductor laser element includes a substrate and a layered structure laminated above a main surface of the substrate, and is disposed with the layered structure facing the submount,
• the layered structure includes a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer laminated in stated order on the substrate,
• a waveguide extending in a first direction parallel to the main surface of the substrate is formed in the layered structure,
• in a cross section perpendicular to the first direction, the bonding material includes:
• an inner region bonded to the semiconductor laser element;
• and
• among regions located outward of the inner region, one outer region located on a side of the inner region that corresponds to one side surface of the semiconductor laser element and an other outer region located on a side of the inner region that corresponds to an other side surface of the semiconductor laser element,
• the one outer region includes a region located outward of the one side surface,
• the other outer region includes a region located outward of the other side surface,
• the one outer region is spaced apart from a point on an end of the semiconductor laser element, the end being in a second direction, the point being located on a line extending in the second direction and passing through a point, on the layered structure, that is closest to the submount, the second direction being perpendicular to the first direction and parallel to the main surface of the substrate,
• the semiconductor laser element includes a front end surface that emits laser light in the first direction and a rear end surface on an opposite side relative to the front end surface,
• the front end surface is located outward of the submount from an outer edge portion of the submount in the first direction,
• the rear end surface is located inward of the submount from the outer edge portion of the submount in the first direction,
• the bonding material is present between the rear end surface and the outer edge portion of the submount, and
• the bonding material is spaced apart from the rear end surface.