Semiconductor laser and method for producing a semiconductor laser

A method for producing a semiconductor laser, comprising the following steps:

• providing a layer sequence comprising a semiconductor layer sequence with a p-doped layer, an n-doped layer and an active region arranged between the p-doped layer and the n-doped layer for generating electromagnetic radiation on a carrier,
• providing a further carrier with a further layer sequence arranged on the further carrier,
• forming an optical structure, wherein the optical structure comprises a refractive index varying in the lateral direction for the electromagnetic radiation generated by the active region, and
• bonding the layer sequence to the further layer sequence, wherein
• the n-doped layer is arranged at least partially between the active region and the optical structure, and
• the optical structure is arranged on the side of the n-doped layer facing away from the active region.