H01J 37/3458
Electromagnets in particular for cathodic sputtering apparatus
Official title: {Electromagnets in particular for cathodic sputtering apparatus (electromagnets in general H01F7/06)}
H01J37/3458 (Electromagnets in particular for cathodic sputtering apparatus) appears on 113 US grants and 95 published applications in this corpus.
Search patents in H01J- Granted patents
- 113
- Published applications
- 95
- Assignees
- 57
- Inventors
- 248
- Latest grant
- 15 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 0 | 0 |
| 1978 | 0 | 0 |
| 1979 | 2 | 0 |
| 1980 | 0 | 0 |
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 1 | 0 |
| 1985 | 1 | 0 |
| 1986 | 8 | 0 |
| 1987 | 2 | 0 |
| 1988 | 2 | 0 |
| 1989 | 3 | 0 |
| 1990 | 3 | 0 |
| 1991 | 1 | 0 |
| 1992 | 3 | 0 |
| 1993 | 2 | 0 |
| 1994 | 1 | 0 |
| 1995 | 2 | 0 |
| 1996 | 3 | 0 |
| 1997 | 2 | 0 |
| 1998 | 1 | 0 |
| 1999 | 1 | 0 |
| 2000 | 0 | 0 |
| 2001 | 3 | 5 |
| 2002 | 8 | 1 |
| 2003 | 0 | 0 |
| 2004 | 2 | 0 |
| 2005 | 0 | 3 |
| 2006 | 1 | 1 |
| 2007 | 0 | 3 |
| 2008 | 0 | 3 |
| 2009 | 2 | 3 |
| 2010 | 1 | 2 |
| 2011 | 0 | 8 |
| 2012 | 2 | 4 |
| 2013 | 4 | 5 |
| 2014 | 4 | 4 |
| 2015 | 5 | 5 |
| 2016 | 1 | 2 |
| 2017 | 4 | 2 |
| 2018 | 0 | 2 |
| 2019 | 1 | 3 |
| 2020 | 3 | 5 |
| 2021 | 4 | 7 |
| 2022 | 6 | 11 |
| 2023 | 8 | 5 |
| 2024 | 7 | 5 |
| 2025 | 3 | 3 |
| 2026 | 3 | 3 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Permeance magnetic assembly15 Sep 2026US 12,738,468 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Plasma process apparatus17 Feb 2026US 12,555,744 B2Samsung Electronics Co., Ltd.
- Physical vapor deposition apparatus10 Feb 2026US 12,548,746 B2Samsung Electronics Co., Ltd.
- EM source for enhanced plasma control10 Jun 2025US 12,325,909 B2APPLIED Materials.Inc.
- Methods for shaping magnetic fields during semiconductor processing21 Jan 2025US 12,203,163 B2APPLIED Materials.Inc.
- Physical vapor deposition apparatus14 May 2026US 2026/0135070 A1Samsung Electronics Co., Ltd.
- Scanning Magnetron Device and Magnetron Sputtering Apparatus for PVD Planar Target23 Apr 2026US 2026/0112591 A1Arrayed Materials (China) Co., Ltd.
- Inverted Cylindrical Magnetron (ICM) System and Methods of Use2 Apr 2026US 2026/0094795 A1Vactronix Scientific, LLC
- Permeance magnetic assembly3 Apr 2025US 2025/0112032 A1Taiwan Semiconductor Manufacturing Company.Ltd
- System and method for particle control in mram processing20 Mar 2025US 2025/0095975 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Integrated process for copper via filling using a magnetron and target producing highly energetic ions197US 6,277,249 B1APPLIED Materials.Inc. · 2001
- Magnetron and target producing an extended plasma region in a sputter reactor183US 6,251,242 B1APPLIED Materials.Inc. · 2001
- Sputtering process and apparatus180US 4,166,018 AAirco, Inc. · 1979
- Sputter coating process control method and apparatus156US 5,126,028 AMaterials Research Corporation · 1992
- Integrated process for copper via filling156US 6,274,008 B1APPLIED Materials.Inc. · 2001