Methods for shaping magnetic fields during semiconductor processing

A method of processing a substrate in a PVD chamber, comprising:

• sputtering material from a target disposed in the PVD chamber and onto a substrate, wherein at least some of the material sputtered from the target is guided to the substrate through a magnetic field provided by one or more upper electromagnets disposed about a processing volume of the PVD chamber above a support pedestal for the substrate in the PVD chamber, one or more lower electromagnets disposed about the processing volume between the support pedestal and the one or more upper electromagnets, one or more upper permanent magnets disposed about the processing volume between the one or more upper electromagnets and the one or more lower electromagnets, wherein the one or more upper electromagnets, the one or more lower electromagnets, and the one or more upper permanent magnets are vertically aligned, one or more first magnets disposed about the support pedestal to provide an increased magnetic field strength at an edge region of the substrate, and one or more second magnets disposed below the support pedestal to provide an increased magnetic field strength at a central region of the substrate.

A method of processing a substrate in a PVD chamber, comprising:

• sputtering material from a target disposed in the PVD chamber and onto a substrate, wherein at least some of the material sputtered from the target is guided to the substrate through a magnetic field provided by one or more upper magnets about a processing volume of the PVD chamber above a support pedestal for the substrate disposed in the PVD chamber, one or more lower magnets disposed about the processing volume between the support pedestal and the one or more upper magnets, one or more upper permanent magnets disposed about the processing volume between the one or more upper magnets and the one or more lower magnets, one or more first magnets about and aligned with the support pedestal and disposed within an interior volume of the PVD chamber, and one or more second magnets below the support pedestal, wherein the one or more upper magnets, the one or more lower magnets, and the one or more upper permanent magnets are vertically aligned.