Magnetron and target producing an extended plasma region in a sputter reactor

A magnetron plasma sputter reactor, comprising:

• a plasma chamber arranged about a central axis and configured to accommodate a substrate to be sputter coated;
• a target around said central axis and having at least one annular vault disposed on a first side of said target facing said substrate, said vault having a width in a radial direction with respect to said central axis, said target being configured to receive electrical power to create a plasma within said plasma chamber;
• a first permanent magnet of a first magnetic polarity along said axis arranged in back of said vault at a first radial distance from said central axis;
• and
• a second permanent magnet of a second magnetic polarity opposite said first polarity disposed in back of said vault at a second radial position from said central axis;
• wherein a difference of said first and second radial positions is between 50% and 150% of said width of said vault.

A magnetron plasma sputter reactor, comprising:

• a plasma chamber arranged about a central axis and configured to accommodate a substrate to be sputter coated;
• a target arranged about said central axis and having at least one annular vault on a first side of said target facing said substrate, a central one of said vaults having an inner vertically extending annular sidewall enclosing a well accessible from a second side of said target and an outer vertically extending annular sidewall opposite said inner side wall, said target being continuous on said first side of said target within said inner sidewall;
• a first permanent magnet of a first magnetic polarity disposed in said well and producing a first magnetic field in said vault;
• and
• a second permanent magnet of a second magnetic polarity opposite said first magnetic polarity disposed radially outwardly of said outer sidewall and producing a second magnetic field in said vault.

A magnetron plasma sputter reactor, comprising:

• a plasma chamber arranged about a central axis and configured to accommodate a substrate to be sputter coated;
• a target arranged about said central axis and having at least one annular vault on a first side of said target facing said substrate, a central one of said vaults having an inner vertically extending annular sidewall enclosing a well accessible from a second side of said target and an outer vertically extending annular sidewall opposite said inner side wall, said target being continuous on said first side of said target within said inner sidewall;
• a first paramagnetic material disposed in said well and producing a first magnetic field in said vault;
• a second paramagnetic material disposed radially outwardly of said outer sidewall and producing a second magnetic field in said vault;
• first and second permanent magnets of opposite magnetic polarities magnetically coupled to said first and second materials on sides of the inner and outer sidewalls opposite said substrate.

A magnetron plasma sputter reactor, comprising:

• a plasma chamber arranged about a vertically extending central axis and configured to accommodate a substrate to be sputter coated;
• a target arranged about said central axis and an annular vault on a first side of said target facing said substrate, said vault having an inner vertically extending annular sidewall enclosing a well accessible from a second side of said target, an outer vertically extending annular sidewall opposite said inner side wall, and a roof connecting said inner and outer sidewalls on a side of said vault opposite said substrate;
• a first magnetic pole of a first magnetic polarity disposed in said well;
• a second magnetic pole of a second magnetic polarity opposite said first magnetic polarity disposed outside of said outer sidewall and magnetically coupled to said first magnetic pole;
• a third magnetic pole of a third, vertical magnetic polarity disposed over said roof;
• and
• a fourth magnetic pole of a fourth, vertical magnetic polarity opposite said third magnetic polarity disposed over said roof and surrounding and magnetically coupled to said third magnetic pole;
• wherein said third and fourth magnetic poles at any one time extend only partially around said central axis.

A magnetron plasma sputter reactor, comprising:

• a plasma chamber arranged about a central axis and configured to accommodate a substrate to be sputter coated;
• a target around said central axis and having an annular vault disposed on a first side of said target facing said substrate, said vault having a substantially tubular inner sidewall and a substantially tubular outer sidewall both extending substantially in parallel to said central axis and a roof connecting ends of said sidewall opposite said substrate, said target being configured to receive electrical power to create a plasma within said plasma chamber;
• a permanent first magnet of a first magnetic polarity along said central axis arranged in back of said roof;
• and
• a permanent second magnet of a second magnetic polarity opposite said first magnetic polarity, surrounding said first magnet, arranged in back of said roof, and not extending at any one time completely around said central axis.