Plasma process apparatus

A plasma process apparatus, comprising:

• a chamber comprising a plasma processing space;
• a substrate stage included in the chamber, the substrate stage comprising a seating surface on which a substrate is seated;
• a target over the substrate stage, the target comprising deposition material;
• a gas supplier configured to supply gas into the chamber;
• a plasma generator configured to generate plasma from the gas that is supplied by the gas supplier, the plasma generator configured to deposit the deposition material on the substrate through the plasma;
• at least one permanent magnet on the target, the at least one permanent magnet being rotatable and configured to distribute the plasma on the target through a magnetic field;
• a coil assembly on an outer wall of the chamber, the coil assembly having a first side coil, a second side coil, and a third side coil inclined at a predetermined angle with respect to a horizontal direction, the first side coil, the second side coil, and the third side coil being configured to generate a first vector, a second vector, and a third vector, respectively, and the coil assembly being configured to generate a magnetic field vector to guide the plasma through a combination of the first vector, the second vector, and the third vector;
• and
• a current supply device configured to control currents that flow through the first side coil, the second side coil, and the third side coil based on a rotational angle of the at least one permanent magnet and be synchronized with a predetermined angular velocity of the at least one permanent magnet,
• wherein the predetermined angle of each of the first side coil, the second side coil, and the third side coil is greater than or less than 0 degree,
• wherein the first side coil, the second side coil, and the third side coil cross each other, and
• wherein degrees between directions of the first vector, the second vector, and the third vector are 120 degree when viewed from a plan view.

A plasma process apparatus, comprising:

• a chamber comprising a plasma processing space;
• a substrate stage included in the chamber, the substrate stage comprising a seating surface configured to support a substrate;
• a target on the substrate stage, the target comprising deposition particles to be deposited on the substrate;
• a gas supplier configured to supply gas into the chamber;
• a plasma generator configured to generate plasma from the gas that is supplied by the gas supplier, the plasma generator configured to deposit the deposition particles on the substrate through the plasma;
• at least one permanent magnet on the target, the at least one permanent magnet being rotatable at a predetermined angular velocity to distribute the plasma on the target through a magnetic field;
• and
• a coil assembly below the target on an outer wall of the chamber, the coil assembly comprising a first side coil, a second side coil, and a third side coil that are inclined at a predetermined angle with respect to a horizontal direction and generate a first vector, a second vector, and a third vector, respectively, the coil assembly being configured to generate a magnetic field vector to guide the plasma in synchronization with the predetermined angular velocity through a combination of the first vector, the second vector, and the third vector,
• wherein first current, second current, and third current flowing in the first to third side coils form three phases with each other,
• wherein the first side coil, the second side coil, and the third side coil have a ring shape,
• wherein the predetermined angle of each of the first side coil, the second side coil, and the third side coil is greater than or less than 0 degree,
• wherein the first side coil, the second side coil, and the third side coil cross each other, and
• wherein degrees between directions of the first vector, the second vector, and the third vector are 120 degree when viewed from a plan view.