H01J 37/32706
Polarising the substrate
Official title: {Polarising the substrate}
H01J37/32706 (Polarising the substrate) appears on 538 US grants and 625 published applications in this corpus.
Search patents in H01J- Granted patents
- 538
- Published applications
- 625
- Assignees
- 142
- Inventors
- 1,262
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1979 | 1 | 0 |
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 4 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 1 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 7 | 0 |
| 1990 | 2 | 0 |
| 1991 | 3 | 0 |
| 1992 | 2 | 0 |
| 1993 | 5 | 0 |
| 1994 | 7 | 0 |
| 1995 | 5 | 0 |
| 1996 | 10 | 0 |
| 1997 | 9 | 0 |
| 1998 | 7 | 0 |
| 1999 | 12 | 0 |
| 2000 | 20 | 0 |
| 2001 | 18 | 8 |
| 2002 | 25 | 22 |
| 2003 | 14 | 14 |
| 2004 | 14 | 17 |
| 2005 | 13 | 17 |
| 2006 | 5 | 30 |
| 2007 | 10 | 30 |
| 2008 | 10 | 27 |
| 2009 | 9 | 24 |
| 2010 | 17 | 18 |
| 2011 | 13 | 18 |
| 2012 | 16 | 12 |
| 2013 | 19 | 21 |
| 2014 | 13 | 29 |
| 2015 | 14 | 16 |
| 2016 | 17 | 22 |
| 2017 | 15 | 22 |
| 2018 | 19 | 24 |
| 2019 | 17 | 20 |
| 2020 | 22 | 22 |
| 2021 | 14 | 31 |
| 2022 | 20 | 29 |
| 2023 | 27 | 46 |
| 2024 | 42 | 29 |
| 2025 | 27 | 45 |
| 2026 | 12 | 32 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Plasma processing method and plasma processing apparatus25 Aug 2026US 12,719,032 B2Tokyo Electron Limited
- System and method for plasma processing18 Aug 2026US 12,712,152 B2Tokyo Electron Limited
- Systems for controlling plasma density distribution profiles including multi-RF zoned substrate supports18 Aug 2026US 12,712,159 B2Lam Research Corporation
- Control of plasma sheath with bias supplies4 Aug 2026US 12,700,569 B2Advanced Energy Industries, Inc.
- High frequency RF generator and DC pulsing2 Jun 2026US 12,646,683 B2Eagle Harbor Technologies, Inc.
- Tunable edge sheath with nanosecond rf pulses10 Sep 2026US 2026/0269195 A1Lam Research Corporation
- Transformer isolator having rf shield structure for effective magnetic power transfer27 Aug 2026US 2026/0253794 A1Lam Research Corporation
- System and Method for Atomic Layer Etching Using an Added Sidewall Coil in Proximity to a Chuck for Substrate Edge Uniformity Control13 Aug 2026US 2026/0237604 A1Inspiring Atoms Pte Ltd
- System and Method for Atomic Layer Etching Using Capacitively Coupled Plasma with Enhanced Synergy6 Aug 2026US 2026/0229456 A1Inspiring Atoms Pte Ltd
- Plasma processing apparatus23 Jul 2026US 2026/0213131 A1Tokyo Electron Limited
Most cited
By later US patents
- Vacuum processing chamber having multi-mode access485US 6,095,083 AApplied Materiels, Inc. · 2000
- Plasma processing apparatus and method485US 7,951,262 B2Tokyo Electron Limited · 2011
- Plasma processing apparatus and plasma processing method482US 7,736,528 B2Panasonic Corporation · 2010
- High-density plasma etching of carbon-based low-k materials in a integrated circuit458US 6,284,149 B1APPLIED Materials.Inc. · 2001
- Inductive plasma reactor330US 6,143,129 AMattson Technology, Inc. · 2000