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US 12,712,152 B2Granted
System and method for plasma processing
AssigneeTokyo Electron Limited
InventorsSergey Voronin, Nicholas Smieszek, Qi Wang, Akiteru Ko, Carl Smith
Life of this patent
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Abstract
A method for plasma processing includes biasing a substrate by ramping a sheath voltage during a first phase of a plasma process and removing sidewall charge buildup on a feature of the substrate in an absence of substrate biasing during a second phase of the plasma process.
Claims19
A method for plasma processing, the method comprising:
- biasing a substrate by applying a bias voltage to a substrate holder or boundary electrode of a plasma processing chamber to ramp a sheath voltage during a first phase of a plasma process;
- and
- exposing a feature to a plasma in an absence of substrate biasing during a second phase of the plasma process to remove sidewall charge buildup on the feature of the substrate, wherein the second phase of the plasma process comprises using a different process chemistry from the first phase of the plasma process.
A method for plasma processing, the method comprising:
- bombarding a feature of a substrate with ions from a first plasma generated with a first source power cycle from a power source, the ions being accelerated towards the substrate by ramping up a DC voltage provided to a boundary electrode above the substrate;
- reducing the DC voltage provided to the boundary electrode to lower the acceleration of the ions towards the substrate;
- and
- applying a second source power cycle from the power source to generate a second plasma and exposing the substrate to the second plasma to remove sidewall charge on a feature of the substrate, the second source power cycle having a greater power level than the first source power cycle.
1 more element
A method for an etch process, the method comprising:
- providing a substrate into a plasma processing chamber;
- generating a plasma in the plasma processing chamber;
- etching a feature of the substrate with energetic reactive ions by applying a bias voltage to a substrate holder or boundary electrode of the plasma processing chamber to produce an accelerating sheath voltage with a ramping amplitude, wherein the sheath voltage has a sinusoidal, rectangular, or sawtooth waveform;
- and
- discharging the feature of the substrate with a source power cycle provided to the plasma processing chamber.
2 more elements
Dependencies are inferred from the claim text.