Plasma processing method and plasma processing apparatus
AssigneeTokyo Electron Limited
InventorIkko Tanaka
Life of this patent
Estimating the term…
Abstract
A plasma processing method includes (a) placing a substrate onto a substrate support surface of a substrate support in a chamber in a plasma processing apparatus. The plasma processing method further includes (b) etching a film on the substrate with plasma. The plasma processing method further includes (c) cleaning the chamber with plasma. In (b) and (c), a bias voltage including a pulse of a direct current voltage and having a pulse waveform is cyclically applied to a bias electrode in the substrate support. The bias voltage has a bias frequency being an inverse of a duration of a waveform cycle of the pulse waveform. The bias frequency is higher in (c) than in (b).
Claims13
A plasma processing apparatus, comprising:
- a chamber;
- a substrate support in the chamber, the substrate support including a substrate support surface and a bias electrode;
- a gas supply configured to supply a gas into the chamber;
- a plasma generator configured to generate plasma in the chamber;
- a bias power supply configured to cyclically apply a bias voltage including a pulse of a direct current voltage and having a pulse waveform to the bias electrode, the bias voltage having a bias frequency being an inverse of a duration of a waveform cycle of the pulse waveform;
- and
- a controller configured to control the gas supply, the plasma generator, and the bias power supply,
- wherein the controller performs operations including
- (b) controlling the gas supply, the plasma generator, and the bias power supply to generate plasma from an etching gas in the chamber and etch a film on a substrate on the substrate support, and
- (c) controlling the gas supply, the plasma generator, and the bias power supply to generate plasma from a cleaning gas in the chamber to clean the chamber, and
- the bias power supply cyclically applies the bias voltage to the bias electrode in (b) and (c), and sets the bias frequency higher in (c) than in (b).
A plasma processing apparatus, comprising:
- a chamber;
- a substrate support in the chamber, the substrate support including a substrate support surface and a bias electrode;
- a gas supply configured to supply a gas into the chamber;
- a plasma generator configured to generate plasma in the chamber;
- a bias power supply configured to cyclically apply a bias voltage including a pulse of a direct current voltage and having a pulse waveform to the bias electrode, the bias voltage having a bias frequency being an inverse of a duration of a waveform cycle of the pulse waveform;
- and
- a controller configured to control the gas supply, the plasma generator, and the bias power supply,
- wherein the controller performs operations including
- (b) controlling the gas supply, the plasma generator, and the bias power supply to generate plasma from an etching gas in the chamber and etch a film on a substrate on the substrate support, and
- (c) controlling the gas supply, the plasma generator, and the bias power supply to generate plasma from a cleaning gas in the chamber to clean the chamber, and
- the bias power supply cyclically applies the bias voltage to the bias electrode in (b) and (c), and sets a greater absolute value for a voltage level of the pulse of the direct current voltage in (c) than in (b).
Dependencies are inferred from the claim text.