Systems for controlling plasma density distribution profiles including multi-RF zoned substrate supports

A substrate processing system comprising:

• a processing chamber including a window;
• a substrate support arranged in the processing chamber, configured to support a substrate on an upper surface thereof and including
• a baseplate, and
• M electrodes disposed in the baseplate, where M is an integer greater than or equal to 2;
• an inner coil arranged outside of the processing chamber adjacent to the window;
• an outer coil arranged outside of the processing chamber adjacent to the window and radially outside of and spaced from the inner coil;
• N radio frequency (RF) sources, where N is an integer greater than or equal to two, wherein each of the N RF sources is configured to supply a respective RF signal to one or more of the M electrodes, wherein each of the respective RF signals is supplied to a different set of the M electrodes, and wherein each of the sets includes a different one or more of the M electrodes;
• N matching networks arranged between the N RF sources and the M electrodes;
• and
• a controller configured to strike plasma by supplying RF power to the inner and outer coils and to vary a plasma density distribution profile in the processing chamber by (i) varying power supplied to the inner coil relative to the outer coil, and (ii) varying power supplied to at least one of the M electrodes relative to at least another one of the M electrodes.

A substrate processing system comprising:

• a processing chamber including a window;
• a substrate support arranged in the processing chamber, configured to support a substrate on an upper surface thereof and including
• a baseplate, and
• a dielectric layer arranged above the baseplate and including M electrodes disposed in the dielectric layer, where M is an integer greater than or equal to two;
• an inner coil arranged outside of the processing chamber adjacent to the window;
• an outer coil arranged outside of the processing chamber adjacent to the window and radially outside of and spaced from the inner coil;
• N radio frequency (RF) sources, where N is an integer greater than or equal to two, wherein each of the N RF sources is configured to supply a respective RF signal to one or more of the M electrodes, wherein each of the respective RF signals is supplied to a different set of the M electrodes, and wherein each of the sets includes a different one or more of the M electrodes;
• N matching networks arranged between the N RF sources and the M electrodes;
• and
• a controller configured to strike plasma by supplying RF power to the inner and outer coils and to vary a plasma density distribution profile in the processing chamber by (i) varying power supplied to the inner coil relative to the outer coil, and (ii) varying power supplied to at least one of the M electrodes relative to power supplied to at least another one the M electrodes.