Plasma processing apparatus

A plasma processing apparatus comprising:

• a chamber;
• a substrate support disposed in the chamber and including at least one lower electrode;
• an upper electrode disposed above the substrate support;
• an RF signal generator electrically connected to the at least one lower electrode or the upper electrode, and configured to generate an RF signal for generating a plasma in the chamber;
• a voltage signal generator electrically connected to the at least one lower electrode and configured to generate a voltage signal, the voltage signal having a sequence of voltage pulses;
• an impedance fixing circuit electrically connected to the upper electrode;
• a capacitor;
• and
• a rectifying element including a first electrode and a second electrode, the first electrode being electrically connected to a node between the upper electrode and the impedance fixing circuit, and the second electrode being electrically connected to a ground potential via the capacitor.

A plasma processing apparatus comprising:

• a chamber;
• a substrate support disposed in the chamber and including an electrode;
• a first voltage signal generator electrically connected to the electrode, and configured to generate a first voltage signal, the first voltage signal having a sequence of first voltage pulses;
• a conductive member constituting a part of the chamber or disposed in the chamber;
• a capacitor;
• and
• a rectifying element including a first electrode and a second electrode, the first electrode being electrically connected to the conductive member and the second electrode being electrically connected to a ground potential via the capacitor.