Tunable edge sheath with nanosecond rf pulses
AssigneeLam Research Corporation
InventorsAlexei MARAKHTANOV, Felix Leib KOZAKEVICH, Kenneth LUCCHESI, Bing JI, John HOLLAND, Bongseong KIM
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AssigneeLam Research Corporation
InventorsAlexei MARAKHTANOV, Felix Leib KOZAKEVICH, Kenneth LUCCHESI, Bing JI, John HOLLAND, Bongseong KIM
Estimating the term…
A system including a plasma chamber configured for generating plasma, wherein the plasma chamber includes a lower electrode located within an electrostatic chuck. The system including an upper electrode disposed above the lower electrode, and an edge ring surrounding the lower electrode. The system including a first nanosecond direct current (DC) pulsing generator electrically coupled to the lower electrode, and configured for supplying a first low frequency pulsed DC power signal to the lower electrode, wherein the first low frequency pulsed DC power signal is non-sinusoidal. The system including a second nanosecond DC pulsing generator electrically coupled to the edge ring, and configured for supplying a second low frequency pulsed DC power signal to the edge ring, wherein the second low frequency pulsed DC power signal is non-sinusoidal, and is substantially aligned with a frequency and phase and pulse shape of the first low frequency pulsed DC power signal.
A system, comprising:
A method, comprising:
Dependencies are inferred from the claim text.