H01J 2237/31771
Using multiple exposure
Official title: using multiple exposure
H01J2237/31771 (Using multiple exposure) appears on 61 US grants and 64 published applications in this corpus.
Search patents in H01J- Granted patents
- 61
- Published applications
- 64
- Assignees
- 19
- Inventors
- 89
- Latest grant
- 21 Jul 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 1 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 2 | 0 |
| 1988 | 1 | 0 |
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 1 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 1 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 1 | 0 |
| 2001 | 2 | 0 |
| 2002 | 1 | 1 |
| 2003 | 2 | 1 |
| 2004 | 0 | 2 |
| 2005 | 2 | 0 |
| 2006 | 0 | 0 |
| 2007 | 0 | 0 |
| 2008 | 0 | 1 |
| 2009 | 0 | 0 |
| 2010 | 1 | 1 |
| 2011 | 0 | 1 |
| 2012 | 1 | 10 |
| 2013 | 4 | 3 |
| 2014 | 2 | 10 |
| 2015 | 10 | 7 |
| 2016 | 6 | 5 |
| 2017 | 4 | 5 |
| 2018 | 2 | 5 |
| 2019 | 4 | 1 |
| 2020 | 1 | 3 |
| 2021 | 3 | 2 |
| 2022 | 1 | 0 |
| 2023 | 2 | 4 |
| 2024 | 1 | 0 |
| 2025 | 1 | 0 |
| 2026 | 2 | 2 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Method and system for determining a charged particle beam exposure for a local pattern density21 Jul 2026US 12,688,998 B2D2S, Inc.
- Proximity effect correction in electron beam lithography24 Feb 2026US 12,560,870 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Method and system for determining a charged particle beam exposure for a local pattern density4 Mar 2025US 12,243,712 B2D2S, Inc.
- Proximity effect correction in electron beam lithography13 Feb 2024US 11,899,373 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Method and system for determining a charged particle beam exposure for a local pattern density12 Sep 2023US 11,756,765 B2D2S, Inc.
- Proximity effect correction in electron beam lithography11 Jun 2026US 2026/0161099 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Raster beam writing method and raster beam writing apparatus12 Mar 2026US 2026/0074144 A1NuFlare Technology, Inc.
- Method and system for determining a charged particle beam exposure for a local pattern density30 Nov 2023US 2023/0386784 A1D2S, Inc.
- Proximity effect correction in electron beam lithography23 Nov 2023US 2023/0375941 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Proximity effect correction in electron beam lithography1 Jun 2023US 2023/0168589 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Charged particle beam exposure method69US 5,082,762 AFujitsu Limited · 1992
- Electron beam proximity effect correction by reverse field pattern exposure51US 4,463,265 AHewlett-Packard Company · 1984
- Method of forming a fine pattern with a charged particle beam46US 4,712,013 AKabushiki Kaisha Toshiba · 1987
- Method for high volume e-beam lithography31US 8,468,473 B1Taiwan Semiconductor Manufacturing Company.Ltd · 2013
- Providing electron beam proximity effect correction by simulating write operations of polygonal shapes29US 8,464,186 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2013