Method of forming a fine pattern with a charged particle beam
AssigneeKabushiki Kaisha Toshiba
InventorsEiji Nishimura, Tadahiro Takigawa, Yoshihide Kato
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Abstract
A method of forming a fine pattern with a charged beam, comprises steps of irradiating, with a charged beam, a predetermined region of a sample to form an exposure pattern on the sample, and irradiating, with at least one of a charged beam or an electromagnetic wave, and at a dose smaller than the dose for forming the main pattern, the entire surface of the specific pattern and nonpattern regions around the specific pattern region to perform an auxiliary exposure. The step of performing the auxiliary exposure is performed at a high voltage of, for example, more than 30 KeV so as not to change the molecular distribution along the direction of thickness of an irradiated portion of the sample.
Claims17
A method of forming a fine pattern with a charged beam, comprising the steps of:
- performing a first irradiation of a predetermined region of a sample with a charged beam to form an exposed pattern on the sample;
- and
- performing a second irradiation of a region around the pattern with either of a charged beam or an electromagnetic wave, and at a dose smaller than the dose for forming the exposure pattern, to perform an auxiliary exposure, the auxiliary exposure being such that a molecular amount distribution remains substantially unchanged along the direction of thickness of said region around the pattern of the sample wherein the step of performing the auxiliary exposure occurs at a voltage of not less than 30 keV.
A method of forming a fine pattern with a charged beam, comprising the steps of:
- performing a first irradiation of a predetermined region of a sample with a charged beam to form an exposed pattern on the sample;
- and
- performing a second irradiation of the predetermined region and a region around said predetermined region with either a charged beam or an electromagnetic wave, and at a dose smaller than the dose for forming the exposure pattern, to perform an auxiliary exposure, the auxiliary exposure being such that a molecular amount distribution remains substantially unchanged along the direction of thickness of said region around the pattern of the sample wherein the step of performing the auxiliary exposure occurs at a voltage of not less than 30 keV.
Dependencies are inferred from the claim text.