Charged particle beam exposure method
AssigneeFujitsu Limited
InventorYasushi Takahashi
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Abstract
A method for selectively exposing a resist layer using a charged particle beam to form a desired pattern. The method includes the steps of repeatedly exposing a basic pattern segment using a charged particle beam so as to expose a pattern within a first predetermined region of the resist layer by a main exposure. The pattern within the first predetermined region is a multiple repetition of the basic pattern segment. A second predetermined region of the layer is exposed by auxiliary exposure at an intensity level lower than that of the main exposure. The second predetermined region excludes the central portions of the first predetermined region and includes a region in which a proximity effect occurs due to the main exposure.
Claims20
A charged particle beam exposure method for selectively exposing a resist layer by use of a charged particle beam to form a desired pattern, said charged particle beam exposure method comprising the steps of:
- repeatedly projecting a basic pattern segment using a charged particle beam so as to expose a pattern within a first predetermined region of the resist layer by a main exposure, said pattern within said first predetermined region being a multiple repetition of the basic pattern segment;
- and
- exposing a second predetermined region of the layer using an auxiliary exposure at a lower intensity level than that of said main exposure, said second predetermined region excluding the central portions of said first predetermined region and including marginal portions wherein the proximity effect occurs due to said main exposure.
Dependencies are inferred from the claim text.