H01J 2237/31757
Hybrid, i.e. charged particles and light, x-rays, plasma
Official title: hybrid, i.e. charged particles and light, X-rays, plasma
H01J2237/31757 (Hybrid, i.e. charged particles and light, x-rays, plasma) appears on 15 US grants and 10 published applications in this corpus.
Search patents in H01J- Granted patents
- 15
- Published applications
- 10
- Assignees
- 17
- Inventors
- 30
- Latest grant
- 8 Aug 2023
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2001 | 1 | 1 |
| 2002 | 0 | 2 |
| 2003 | 2 | 2 |
| 2004 | 3 | 1 |
| 2005 | 2 | 1 |
| 2006 | 1 | 0 |
| 2007 | 1 | 2 |
| 2008 | 0 | 0 |
| 2009 | 0 | 0 |
| 2010 | 0 | 0 |
| 2011 | 1 | 1 |
| 2012 | 1 | 0 |
| 2013 | 0 | 0 |
| 2014 | 1 | 0 |
| 2015 | 0 | 0 |
| 2016 | 0 | 0 |
| 2017 | 0 | 0 |
| 2018 | 0 | 0 |
| 2019 | 0 | 0 |
| 2020 | 1 | 0 |
| 2021 | 0 | 0 |
| 2022 | 0 | 0 |
| 2023 | 1 | 0 |
By publication year.
Recent patents
- Lithography system, sensor and measuring method8 Aug 2023US RE49,602 E1ASML Netherlands B. V.
- Lithography system, sensor and measuring method9 Jun 2020US RE48,046 E1ASML Netherlands B. V.
- Reliability in a maskless lithography system18 Nov 2014US 8,890,095 B2Mapper Lithography IP B.V.
- Exposure method and method of making a semiconductor device30 Oct 2012US 8,298,732 B2Fujitsu Semiconductor Limited
- Lithography system, sensor and measuring method11 Jan 2011US 7,868,300 B2Mapper Lithography IP B.V.
- Exposure method and method of making a semiconductor device25 Aug 2011US 2011/0207053 A1Fujitsu Semiconductor Limited
- Lithography system, sensor and measuring method15 Mar 2007US 2007/0057204 A1Mapper Lithography IP B.V.
- Reliability in a maskless lithography system8 Feb 2007US 2007/0029507 A1Mapper Lithography IP B.V.
- Combined e-beam and optical exposure semiconductor lithography21 Jul 2005US 2005/0160383 A1Taiwan Semiconductor Manufacturing Company, Ltd.
- Exposure method and device manufacturing method using this exposure method15 Apr 2004US 2004/0071336 A1Canon Kabushiki Kaisha
Most cited
By later US patents
- Semiconductor device and a manufacturing method of the same111US 6,709,880 B2Hitachi, Ltd. · 2004
- Lithography system, sensor and measuring method23US 7,868,300 B2Mapper Lithography IP B.V. · 2011
- Dual source lithography for direct write application6US 6,894,762 B1LSI Logic Corporation · 2005
- Exposure method and device manufacturing method using this exposure method4US 6,741,732 B2Canon Kabushiki Kaisha · 2004
- Combined E-beam and optical exposure semiconductor lithography4US 6,875,624 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2005