Combined E-beam and optical exposure semiconductor lithography
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorChin-Hsiang Lin
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Abstract
Combined e-beam and optical exposure lithography for semiconductor fabrication is disclosed. E-beam direct writing to is employed to create critical dimension (CD) areas of a semiconductor design on a semiconductor wafer. Optical exposure lithography is employed to create non-CD areas of the semiconductor design on the semiconductor CD's of the semiconductor design can also be separated from non-CD's of the semiconductor design prior to employing e-beam direct writing and optical exposure lithography.
Claims10
A method for fabricating one or more semiconductor devices according to a semiconductor design on a semiconductor wafer comprising:
- coating the semiconductor wafer with photoresist;
- producing a common alignment mark on the photoresist coating the semiconductor wafer for use in both e-beam direct writing and optical exposure lithography;
- creating critical dimension (CD) areas of the semiconductor design on the semiconductor wafer with electron (e-) beam direct writing, the CD areas including CD's that are geometries and spacings used to monitor pattern size and ensure that the pattern size is within specification;
- and,
- creating non-CD areas of the semiconductor design on the semiconductor with optical exposure lithography.
Dependencies are inferred from the claim text.