Exposure method and device manufacturing method using this exposure method

An exposure method of exposing a second pattern with a second exposure apparatus so as to match a first pattern formed on a sample upon exposure with a first exposure apparatus, said method comprising the steps of:

• setting a matrix on the sample;
• measuring or calculating an offset of a point corresponding to each matrix point on the first pattern from an ideal position, wherein a block pitch of a first portion is larger than a block pitch of a second portion on the matrix, an offset in the first position is smaller than an offset of the second position, the block pitches are selected based on a required overlay accuracy between the first pattern and the second pattern;
• and
• exposing the second pattern on the basis of the measured or calculated offset,
• wherein the overlay accuracy is a relative position accuracy between the first pattern and the second pattern.

An exposure apparatus comprising:

• a controller for performing exposure by using an exposure method of exposing a second pattern with a second exposure apparatus so as to match a first pattern formed on a sample upon exposure with a first exposure apparatus;
• wherein the method comprises the steps of:
• setting a matrix on the sample;
• measuring or calculating an offset of a point corresponding to each matrix point on the first pattern from an ideal position, wherein a block pitch of a first portion is larger than a block pitch of a second portion on the matrix, an offset of the first portion is smaller than an offset of the second portion, the block pitches are selected based on a required overlay accuracy between the first pattern and the second pattern;
• and
• exposing the second pattern on the basis of a measured or calculated offset,
• wherein said overlay accuracy is a relative position accuracy between the first pattern and the second pattern.