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AssigneesHitachi, Ltd., Hitachi ULSI Systems Co., Ltd.
InventorsJiro Yamamoto, Fumio Murai, Tsuneo Terasawa, Tosiyuki Yamamoto
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There is disclosed a method for forming micro patterns in a semiconductor integrated circuit device with high productivity and high accuracy. A photolithography having high throughput and electron beam lithography using a reticle and having relatively high throughput and high resolution are selectively used so as to obtain highest throughput while satisfying accuracy and resolution required for each product/layer. In the case of using the electron beam lithography, a non-complementary reticle and a complementary reticle are selectively used so as to obtain highest throughput while satisfying required accuracy and resolution. Thus, productivity and integration can be improved for the semiconductor integrated circuit device.
A method of manufacturing a semiconductor device by reductively projecting patterns including a plurality of non-repeated patterns formed on a mask onto a semiconductor substrate, comprising:
A method of manufacturing a semiconductor device including a desired pattern formed on a semiconductor substrate, comprising:
A method of manufacturing a semiconductor device by reductively projecting patterns including a plurality of non-repeated patterns formed on a mask onto a semiconductor substrate, comprising:
Dependencies are inferred from the claim text.