G11C 29/702
By replacing auxiliary circuits
Official title: {by replacing auxiliary circuits, e.g. spare voltage generators, decoders or sense amplifiers, to be used instead of defective ones}
G11C29/702 (By replacing auxiliary circuits) appears on 218 US grants and 355 published applications in this corpus.
Search patents in G11C- Granted patents
- 218
- Published applications
- 355
- Assignees
- 84
- Inventors
- 527
- Latest grant
- 18 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1998 | 1 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 1 | 0 |
| 2002 | 1 | 1 |
| 2003 | 0 | 0 |
| 2004 | 0 | 0 |
| 2005 | 0 | 0 |
| 2006 | 0 | 0 |
| 2007 | 0 | 0 |
| 2008 | 0 | 1 |
| 2009 | 0 | 0 |
| 2010 | 1 | 1 |
| 2011 | 0 | 5 |
| 2012 | 2 | 11 |
| 2013 | 6 | 10 |
| 2014 | 12 | 15 |
| 2015 | 14 | 9 |
| 2016 | 11 | 13 |
| 2017 | 11 | 10 |
| 2018 | 16 | 14 |
| 2019 | 17 | 17 |
| 2020 | 17 | 21 |
| 2021 | 20 | 25 |
| 2022 | 18 | 20 |
| 2023 | 19 | 19 |
| 2024 | 18 | 25 |
| 2025 | 19 | 14 |
| 2026 | 14 | 124 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Memory devices, driving methods thereof, and memory systems1 Oct 2026US 2026/0301850 A1Yangtze Memory Technologies Co., Ltd.
- Memory device and repair method of the memory device17 Sep 2026US 2026/0279484 A1Samsung Electronics Co., Ltd.
- Method for lut-free memory repair27 Aug 2026US 2026/0253660 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Nonvolatile semiconductor memory426US 8,599,613 B2Kabushiki Kaisha Toshiba · 2013
- Dram circuit, redundant refresh circuit and refresh method87US 9,799,391 B1Nanya Technology Corporation · 2017
- Semiconductor device77US 8,400,805 B2Elpida Memory, Inc. · 2013
- Redundancy area refresh rate increase36US 10,468,076 B1Micron Technology, Inc. · 2019
- Apparatuses and methods for staggered timing of targeted refresh operations34US 10,825,505 B2Micron Technology, Inc. · 2020