G11C 2211/5612
Multilevel memory cell with more than one floating gate
G11C2211/5612 (Multilevel memory cell with more than one floating gate) appears on 85 US grants and 38 published applications in this corpus.
Search patents in G11C- Granted patents
- 85
- Published applications
- 38
- Assignees
- 38
- Inventors
- 109
- Latest grant
- 26 Apr 2022
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1991 | 1 | 0 |
| 1992 | 2 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 1 | 0 |
| 1996 | 0 | 0 |
| 1997 | 3 | 0 |
| 1998 | 13 | 0 |
| 1999 | 10 | 0 |
| 2000 | 7 | 0 |
| 2001 | 10 | 2 |
| 2002 | 10 | 9 |
| 2003 | 6 | 4 |
| 2004 | 2 | 4 |
| 2005 | 2 | 1 |
| 2006 | 3 | 1 |
| 2007 | 0 | 1 |
| 2008 | 1 | 0 |
| 2009 | 0 | 3 |
| 2010 | 3 | 1 |
| 2011 | 1 | 1 |
| 2012 | 0 | 1 |
| 2013 | 0 | 0 |
| 2014 | 2 | 2 |
| 2015 | 2 | 1 |
| 2016 | 0 | 2 |
| 2017 | 2 | 1 |
| 2018 | 1 | 2 |
| 2019 | 0 | 0 |
| 2020 | 1 | 1 |
| 2021 | 1 | 0 |
| 2022 | 1 | 1 |
By publication year. Applications have been published since 2001.
Recent patents
- Split-gate, 2-bit non-volatile memory cell with erase gate disposed over word line gate, and method of making same26 Apr 2022US 11,315,635 B2Silicon Storage Technology, Inc.
- Nonvolatile memory device including two-dimensional material and apparatus including the nonvolatile memory device1 Jun 2021US 11,024,748 B2Samsung Electronics Co., Ltd.
- Dense arrays and charge storage devices5 May 2020US 10,644,021 B2SanDisk Technologies LLC
- Dense arrays and charge storage devices26 Jun 2018US 10,008,511 B2SanDisk Technologies LLC
- Method of operating flash memory unit2 May 2017US 9,640,252 B1Shanghai Huahong Grace Semiconductor Manufacturing Corporation
- Split-gate, 2-bit non-volatile memory cell with erase gate disposed over word line gate, and method of making same31 Mar 2022US 2022/0101920 A1Silicon Storage Technology, Inc.
- Dense arrays and charge storage devices6 Aug 2020US 2020/0251492 A1SanDisk Technologies LLC
- Nonvolatile memory device including two-dimensional material and apparatus including the nonvolatile memory device13 Dec 2018US 2018/0358470 A1Samsung Electronics Co., Ltd.
- Dense arrays and charge storage devices6 Sep 2018US 2018/0254286 A1SanDisk Technologies LLC
- Dense arrays and charge storage devices23 Mar 2017US 2017/0084627 A1SanDisk Technologies LLC
Most cited
By later US patents
- Multigate semiconductor device with vertical channel current and method of fabrication396US 6,580,124 B1Matrix Semiconductor, Inc. · 2003
- Monolithic three dimensional array of charge storage devices containing a planarized surface361US 6,881,994 B2Matrix Semiconductor, Inc. · 2005
- Multigate semiconductor device with vertical channel current and method of fabrication307US 6,677,204 B2Matrix Semiconductor, Inc. · 2004
- Non-volatile semiconductor memory device with facility of storing tri-level data274US 5,021,999 AMitsubishi Denki Kabushiki Kaisha · 1991
- Dual floating gate EEPROM cell array with steering gates shared by adjacent cells256US 6,151,248 ASanDisk Corporation · 2000