Nonvolatile memory device including two-dimensional material and apparatus including the nonvolatile memory device
AssigneeSamsung Electronics Co., Ltd.
InventorsJaeho LEE, Haeryong KIM, Sanghyun JO, Hyeonjin SHIN
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Abstract
Provided are nonvolatile memory devices including 2-dimensional (2D) material and apparatuses including the nonvolatile memory devices. A nonvolatile memory device may include a storage stack including a plurality of charge storage layers between a channel element and a gate electrode facing the channel element. The plurality of charge storage layers may include a 2D material. An interlayer barrier layer may be further provided between the plurality of charge storage layers. The nonvolatile memory device may have a multi-bit or multi-level memory characteristic due to the plurality of charge storage layers.
Claims29
A nonvolatile memory device comprising:
- a channel element;
- a source and a drain electrically each connected to the channel element, the source and the drain being spaced apart from each other;
- a gate electrode facing the channel element;
- and
- a storage stack between the channel element and the gate electrode,
- the storage stack including a plurality of charge storage layers spaced apart from each other from the channel element towards the gate electrode,
- each of the plurality of charge storage layers including a 2-dimensional (2D) material, and
- wherein the nonvolatile memory device is configured to have a multi-bit memory characteristic due to the plurality of charge storage layers.
A nonvolatile memory device comprising:
- a channel element;
- a gate electrode connected to the channel element and facing the channel element;
- a source and a drain electrically each connected to the channel element, the source and the drain being spaced apart from each other;
- and
- a storage stack between the channel element and the gate electrode,
- the storage stack including a plurality of charge storage layers and a plurality of interlayer barrier layers separating the plurality of charge storage layers from each other,
- each of the plurality of charge storage layers including a 2-dimensional (2D) material, and
- the plurality of charge storage layers being electrically insulated from the source and the drain, wherein
- the nonvolatile memory device is configured to have a multi-bit memory characteristic due to use of the plurality of charge storage layers.
Dependencies are inferred from the claim text.