Nonvolatile memory device including two-dimensional material and apparatus including the nonvolatile memory device

A nonvolatile memory device comprising:

• a channel element;
• a source and a drain electrically each connected to the channel element. the source and the drain being spaced apart from each other;
• a gate electrode facing the channel element;
• a storage stack between the channel element and the gate electrode,
• the storage stack including a plurality of charge storage layers spaced apart from each other from the channel element towards the gate electrode,
• each of the plurality of charge storage layers including a 2-dimensional (2D) material;
• and
• a channel barrier layer between the channel element and the storage stack,
• wherein
• the nonvolatile memory device is configured to have a multi-bit memory characteristic due to the plurality of charge storage layers,
• the storage stack further includes a plurality of interlayer barrier layers alternately provided between the plurality of charge storage layers such that,
• each corresponding interlayer barrier layer among the plurality of interlayer barrier layers is between two adjacent charge storage layers among the plurality of charge storage layers, and
• each corresponding charge storage layer among the plurality of charge storage layers is between two adjacent interlayer barrier layers among the plurality of interlayer barrier layers,
• the plurality of interlayer barrier layers comprise a material having an energy band gap,
• the plurality of interlayer barrier layers include a 2D semiconductor or a 2D insulator, and
• thicknesses of the plurality of interlayer barrier layers decrease from the channel element towards the gate electrode,
• wherein thicknesses of the plurality of charge storage layers increase from the channel element towards the gate electrode.