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US 2018/0254286 A1Published application
Dense arrays and charge storage devices
AssigneeSanDisk Technologies LLC
InventorsThomas H. Lee, Igor G. Kouznetsov
Life of this patent
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Abstract
There is provided a monolithic three dimensional array of charge storage devices which includes a plurality of device levels, wherein at least one surface between two successive device levels is planarized by chemical mechanical polishing.
Claims19
An array of memory cells comprising:
- a plurality of cells having at least one semiconductor region and a storage region for trapping charge, and
- a control means for controlling the flow of current through the semiconductor region and the storage region.
An array of nonvolatile memory cells, wherein each memory cell comprises a semiconductor device and each memory cell size per bit is about (2 f2)/N, where f is a minimum feature size and N is a number of device layers in a third dimension, and where N>1.
Dependencies are inferred from the claim text.