G11C 16/3431

Circuits or methods to detect disturbed nonvolatile memory cells

Official title: {Circuits or methods to detect disturbed nonvolatile memory cells, e.g. which still read as programmed but with threshold less than the program verify threshold or read as erased but with threshold greater than the erase verify threshold, and to reverse the disturbance via a refreshing programming or erasing step}

G11C16/3431 (Circuits or methods to detect disturbed nonvolatile memory cells) appears on 886 US grants and 773 published applications in this corpus.

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G11C 16/3431: granted patents and published applications per publication year
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197730
197810
197910
198010
198110
198220
198350
198430
198560
198610
198730
198820
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199040
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1998160
1999180
2000180
2001103
20021214
20031424
20042321
20052020
20061223
20072734
20082536
20093132
20102934
20113323
20122521
20132425
20144040
20153438
20164332
20174540
20184440
20194042
20205351
20213934
20224032
20233037
20243334
20252424
20261319

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