Flash memory with targeted read scrub algorithm

A method for counteracting read disturb effects in a flash memory device comprising:

• in a controller of the flash memory device, the controller:
• receiving a read command from a host;
• determining if a scan for errors in a portion of the flash memory device is necessary in response to the read command;
• and
• in response to determining that the scan is necessary:
• identifying a word line of the flash memory to scan based on the received read command;
• scanning only the identified word line for data errors, without scanning any other word line in a block containing the identified word line, wherein scanning only the identified word line comprises scanning only an upper page of the identified word line;
• placing the block in a refresh queue if an error threshold is detected in the identified word line;
• and
• if the error threshold is not detected in the identified word line, waiting for a next read command from the host.