G11C 11/4113
With at least one cell access to base or collector of at
Official title: {with at least one cell access to base or collector of at least one of said transistors, e.g. via access diodes, access transistors}
G11C11/4113 (With at least one cell access to base or collector of at) appears on 121 US grants and 15 published applications in this corpus.
Search patents in G11C- Granted patents
- 121
- Published applications
- 15
- Assignees
- 40
- Inventors
- 166
- Latest grant
- 29 Jul 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 10 | 0 |
| 1977 | 7 | 0 |
| 1978 | 9 | 0 |
| 1979 | 5 | 0 |
| 1980 | 5 | 0 |
| 1981 | 9 | 0 |
| 1982 | 8 | 0 |
| 1983 | 7 | 0 |
| 1984 | 4 | 0 |
| 1985 | 3 | 0 |
| 1986 | 5 | 0 |
| 1987 | 5 | 0 |
| 1988 | 3 | 0 |
| 1989 | 5 | 0 |
| 1990 | 3 | 0 |
| 1991 | 9 | 0 |
| 1992 | 3 | 0 |
| 1993 | 0 | 0 |
| 1994 | 2 | 0 |
| 1995 | 1 | 0 |
| 1996 | 1 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 1 |
| 2002 | 0 | 0 |
| 2003 | 3 | 0 |
| 2004 | 0 | 0 |
| 2005 | 0 | 0 |
| 2006 | 0 | 0 |
| 2007 | 0 | 0 |
| 2008 | 0 | 0 |
| 2009 | 0 | 0 |
| 2010 | 0 | 0 |
| 2011 | 0 | 0 |
| 2012 | 0 | 0 |
| 2013 | 0 | 0 |
| 2014 | 0 | 0 |
| 2015 | 0 | 0 |
| 2016 | 4 | 7 |
| 2017 | 3 | 1 |
| 2018 | 0 | 0 |
| 2019 | 2 | 0 |
| 2020 | 0 | 1 |
| 2021 | 1 | 2 |
| 2022 | 2 | 0 |
| 2023 | 0 | 1 |
| 2024 | 1 | 1 |
| 2025 | 1 | 0 |
| 2026 | 0 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Variable voltage bit line precharge29 Jul 2025US 12,374,386 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Variable voltage bit line precharge12 Mar 2024US 11,929,113 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Variable voltage bit line precharge6 Dec 2022US 11,521,673 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Memory system and semiconductor storage device configured to discharge word line during abrupt power interrupt2 Aug 2022US 11,404,101 B2Kioxia Corporation
- Fixed-level charge sharing type LCV for memory compiler16 Feb 2021US 10,923,182 B2Taiwan Semiconductor Manufacturing Company, Ltd.
- Memory device including ternary memory cell24 Sep 2026US 2026/0290447 A1Ternell Co., Ltd.
- Variable voltage bit line precharge27 Jun 2024US 2024/0212745 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Variable voltage bit line precharge30 Mar 2023US 2023/0098852 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Memory system and semiconductor storage device5 Aug 2021US 2021/0241812 A1Kioxia Corporation
- Variable voltage bit line precharge3 Jun 2021US 2021/0166750 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- High density vertical SRAM cell using bipolar latchup induced by gated diode breakdown52US 6,545,297 B1Micron Technology, Inc. · 2003
- Method of manufacturing a reference voltage generator device39US 4,559,694 AHitachi, Ltd. · 1985
- Reference voltage generator device38US 5,159,260 AHitachi, Ltd. · 1992
- Integrated injection logic memory circuit34US 4,056,810 AU. S. Phillips Corporation · 1977
- Semiconductor cell memory with current sensing33US 5,163,022 AHitachi Device Engineering Co., Ltd. · 1992