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US 2024/0212745 A1Published application
Variable voltage bit line precharge
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsAtul Katoch, Adrian Earle
Life of this patent
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Abstract
A memory device includes an array of memory cells, a bit line connected to the memory cells, and a power supply voltage input terminal configured to receive a power supply voltage at a first voltage level to operate the memory cells at the first voltage level. A bit line precharge circuit has an input terminal configured to receive the power supply voltage at the first voltage level, and the bit line precharge circuit is configured to precharge the bit lines to a second voltage level lower than the first voltage level.
Claims1
A precharge circuit, comprising:
- a terminal at a first voltage level;
- a first switch connecting the first terminal to one or more bit lines;
- one or more second switches connecting the first terminal to the one or more bit lines;
- and
- a precharge controller connected to the first switch and the one or more second switches, wherein the controller is configured to actuate the first switch to charge the one or more bit lines to the first voltage level for a first time period, and configured to actuate the one or more second switches to charge the one or more bit lines to a second voltage level for a second time period, the second voltage level being less than the first voltage level.
2 more elements
Dependencies are inferred from the claim text.