G11C 11/411
Using bipolar transistors only
Official title: using bipolar transistors only
G11C11/411 (Using bipolar transistors only) appears on 219 US grants and 41 published applications in this corpus.
Search patents in G11C- Granted patents
- 219
- Published applications
- 41
- Assignees
- 68
- Inventors
- 278
- Latest grant
- 29 Jul 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 10 | 0 |
| 1977 | 9 | 0 |
| 1978 | 12 | 0 |
| 1979 | 9 | 0 |
| 1980 | 8 | 0 |
| 1981 | 17 | 0 |
| 1982 | 13 | 0 |
| 1983 | 13 | 0 |
| 1984 | 10 | 0 |
| 1985 | 7 | 0 |
| 1986 | 7 | 0 |
| 1987 | 12 | 0 |
| 1988 | 8 | 0 |
| 1989 | 11 | 0 |
| 1990 | 4 | 0 |
| 1991 | 11 | 0 |
| 1992 | 5 | 0 |
| 1993 | 1 | 0 |
| 1994 | 4 | 0 |
| 1995 | 2 | 0 |
| 1996 | 1 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 1 | 0 |
| 2001 | 0 | 1 |
| 2002 | 0 | 0 |
| 2003 | 4 | 0 |
| 2004 | 0 | 0 |
| 2005 | 0 | 0 |
| 2006 | 0 | 0 |
| 2007 | 0 | 0 |
| 2008 | 0 | 0 |
| 2009 | 0 | 0 |
| 2010 | 0 | 0 |
| 2011 | 0 | 1 |
| 2012 | 0 | 2 |
| 2013 | 1 | 1 |
| 2014 | 3 | 3 |
| 2015 | 3 | 3 |
| 2016 | 9 | 14 |
| 2017 | 7 | 3 |
| 2018 | 3 | 1 |
| 2019 | 3 | 2 |
| 2020 | 2 | 2 |
| 2021 | 1 | 2 |
| 2022 | 3 | 2 |
| 2023 | 2 | 2 |
| 2024 | 2 | 1 |
| 2025 | 1 | 0 |
| 2026 | 0 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Variable voltage bit line precharge29 Jul 2025US 12,374,386 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Variable voltage bit line precharge12 Mar 2024US 11,929,113 B2Taiwan Semiconductor Manufacturing Company.Ltd
- One transistor memory bitcell with arithmetic capability2 Jan 2024US 11,862,282 B2Ceremorphic, Inc.
- Memory controlling device and memory system including the same7 Nov 2023US 11,809,317 B2MemRay Corporation
- Dual compare ternary content addressable memory18 Apr 2023US 11,631,459 B2Hewlett Packard Enterprise Development LP
- Memory device including ternary memory cell24 Sep 2026US 2026/0290447 A1Ternell Co., Ltd.
- Variable voltage bit line precharge27 Jun 2024US 2024/0212745 A1Taiwan Semiconductor Manufacturing Company.Ltd
- One Transistor Memory Bitcell with Arithmetic Capability22 Jun 2023US 2023/0197121 A1Ceremorphic, Inc.
- Variable voltage bit line precharge30 Mar 2023US 2023/0098852 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Memory controlling device and memory system including the same7 Jul 2022US 2022/0214969 A1MemRay Corporation
Most cited
By later US patents
- High density planar SRAM cell with merged transistors71US 6,128,216 AMicron Technology, Inc. · 2000
- Memory cell and read circuit58US 4,995,001 AInternational Business Machines Corporation · 1991
- High density vertical SRAM cell using bipolar latchup induced by gated diode breakdown52US 6,545,297 B1Micron Technology, Inc. · 2003
- Bipolar semiconductor memory device with double word lines structure46US 4,792,923 AMitsubishi Denki Kabushiki Kaisha · 1988
- Method of manufacturing a reference voltage generator device39US 4,559,694 AHitachi, Ltd. · 1985