US 11,631,459 B2Granted

Dual compare ternary content addressable memory

AssigneeHewlett Packard Enterprise Development LP

InventorJohn Alan Wickeraad

Life of this patent

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Abstract

A ternary content addressable memory (TCAM) semiconductor device includes a first and second data storage portions each connected to a bit line. The first data storage portion is connected to a first word line, and to a first and third group of in series transistors. The second data storage portion is connected to a second word line, and to a second and fourth group of in series transistors. The first group and second group of in series transistors are each connected to a first match line. The first group is connected to a first search line bar, and the second group is connected to a first search line. A third and fourth group of in series transistors are each connected to a second match line. The third group is connected to a second search line, and the fourth group is connected to a second search line bar.

Claims13

Dependent claims

A semiconductor device comprising:

a first data storage portion;
a second data storage portion;
the first and second data storage portions each connected to a bit line;
the first data storage portion connected to a first word line;
the second data storage portion connected to a second word line;
a first group of in series transistors connected to a first match line;
a second group of in series transistors connected to the first match line;
the first group of in series transistors connected to a first search line bar;
and
the second group of in series transistors connected to a first search line;
a third group of in series transistors connected to a second match line;
a fourth group of in series transistors connected to the second match line;
the third group of in series transistors connected to a second search line;
the fourth group of in series transistors connected to a second search line bar;
the first data storage portion connected to the first group and third group of in series transistors;
and
the second data storage portion connected to the second group and fourth group of in series transistors.

14 more elements

Dependencies are inferred from the claim text.

Facts

Application: 17/282,767Filed 30 Oct 2018
Published: US 2022/0013174 A113 Jan 2022
Granted: 18 Apr 2023
Term ends: Not estimatedThe source records don’t support an estimate.

Classification12 codes

G11C 15/04
Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out…
G11C 15/00
Digital stores in which information comprising one or more characteristic parts is
G11C 15/02
Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out…
G11C 11/1697
Auxiliary circuits: power supply circuits