US 5,159,260 A · Reference voltage generator device

Abstract

This reference voltage generator device detects a voltage corresponding to an energy gap of a semiconductor, or a voltage of a value close thereto, or a voltage based on an energy level of a semiconductor, and generates the detected voltage as a reference voltage. The reference voltage is generated by detecting a difference of threshold voltages of first and second insulated gate field-effect transistors (IGFETs). Gate electrodes of the first and second IGFETs are formed on gate insulating films which are formed on different surface areas of an identical semiconductor substrate under substantially the same conditions. The gate electrodes of the first and second IGFETs are respectively made of two semiconductors which are selected from among a semiconductor of a first conductivity type, a semiconductor of a second conductivity type and an intrinsic semiconductor made of an identical semiconductor material, and which have Fermi energy levels of values different from each other. The channels of the first and second IGFETs have an identical conductivity type. On the basis of a self-alignment structure, at least those parts of first and second polycrystalline semiconductor regions being the gate electrodes of the first and second IGFETs which are proximate to source and drain regions are doped with the same impurity as that of the source and drain regions, and a central part of one of the first and second polycrystalline semiconductor regions is doped with an impurity of a selected one of the first conductivity type and the second conductivity type.

Claims10

Dependent claims

A reference voltage generator device comprising:

first and second insulated gate field-effect transistors of the same conductivity type formed at a common semiconductor substrate of one conductivity type, and having first and second gate electrodes of a substantially identical semiconductor material respectively, said first electrode having a part which is of one of P, N and intrinsic types to determine a threshold voltage of said first insulated gate field-effect transistor, said second electrode having a part which is of one of P, N and intrinsic types but is of type different from said threshold determining part of said first gate electrode to determine a threshold voltage of said second insulated gate field-effect transistor and to provide a difference of the threshold voltages corresponding to a difference of Fermi levels of said first and second gate electrodes, the impurity concentrations of the semiconductor material of said P and N types being higher than 10.sup.18 cm.sup.-3 respectively;
and
a voltage detecting circuit for providing a reference voltage which is based on said difference of the threshold voltages of said first and second insulated gate field-effect transistors,
wherein said semiconductor material is silicon,
wherein said first gate electrode has at least a central part of N-type silicon, while said second gate electrode has at least a central part of P-type silicon or intrinsic silicon, whereby the voltage thresholds of said first and second insulated gate field-effect transistors are determined by the central parts of said first and second gate electrodes respectively, and
wherein the conductivity type of the first and second insulated gate field-effect transistors is of N-channel type and said second gate electrode is made of intrinsic silicon.

3 more elements

A reference voltage generator device comprising:

a first semiconductor layer being a silicon layer of N-type, a silicon layer of P-type, an intrinsic silicon layer, a silicon layer whose central part is N-type and whose both ends are P-type, a silicon layer whose central part is P-type and whose both ends are N-type, a silicon layer whose central part is intrinsic and whose both ends are P-type, a silicon layer whose central part is intrinsic and whose both ends are N-type, a silicon layer whose central part and whose both ends are P-type and whose intermediate parts between said central part and said both ends are intrinsic or a silicon layer whose central part is N-type, whose both ends are P-type and whose intermediate parts between said central part and said both ends are intrinsic;
a second semiconductor layer being a silicon layer of N-type, a silicon layer of P-type, an intrinsic silicon layer, a silicon layer whose central part is N-type and whose both ends are P-type, a silicon layer whose central part is P-type and whose both ends are N-type, a silicon layer whose central part is intrinsic and whose both ends are P-type, a silicon layer whose central part is intrinsic and whose both ends are N-type, a silicon layer whose central part and whose both ends are P-type and whose intermediate parts between said central part and said both ends are intrinsic or a silicon layer whose central part is N-type, whose both ends are P-type and whose intermediate parts between said central part and said both ends are intrinsic, the conductivity type determining impurity concentration of the silicon layer of P-type or N-type used as each of said first and second semiconductor layers is higher than 10.sup.18 cm.sup.-3, said first and second semiconductor layers being a gate electrode of a first insulated gate field-effect transistor and a gate electrode of a second insulated gate field-effect transistor, respectively, said first and second insulated gate field-effect transistors being of the same conductivity type;
and
a voltage detecting circuit for providing a reference voltage which is based on a difference of threshold voltages of said first and second insulated gate field-effect transistors,
wherein said gate electrodes of said first and second insulated gate field-effect transistors are formed on gate insulating films of the same insulating material which are formed on different surface areas of an identical semiconductor substrate, said gate insulating films being of the same insulating material and having the same thickness,
wherein at least respective central parts of said first and second semiconductor layers are utilized as said gate electrodes of said first and second insulated gate field-effect transistors, and
wherein said gate electrode, the source region and the drain region of each of said first and second insulated gate field-effect transistors are respectively made up of a plurality of gate polycrystalline region parts, a plurality of source region parts and a plurality of drain region parts, and said plurality of gate polycrystalline region parts are electrically connected in common by a gate interconnection layer, said plurality of source region parts are electrically connected in common by a source interconnection layer and said plurality of drain region parts are electrically connected in common by a drain interconnection layer.

4 more elements

A reference voltage generator device comprising:

a first semiconductor layer being a silicon layer of N-type, a silicon layer of P-type, an intrinsic silicon layer, a silicon layer whose central part is N-type and whose both ends are P-type, a silicon layer whose central part is P-type and whose both ends are N-type, a silicon layer whose central part is intrinsic and whose both ends are P-type, a silicon layer whose central part is intrinsic and whose both ends are N-type, a silicon layer whose central part and whose both ends are P-type and whose intermediate parts between said central part and said both ends are intrinsic or a silicon layer whose central part is N-type, whose both ends are P-type and whose intermediate parts between said central part and said both ends are intrinsic;
a second semiconductor layer being a silicon layer of N-type, a silicon layer of P-type, an intrinsic silicon layer, a silicon layer whose central part is N-type and whose both ends are P-type, a silicon layer whose central part is P-type and whose both ends are N-type, a silicon layer whose central part is intrinsic and whose both ends are P-type, a silicon layer whose central part is intrinsic and whose both ends are N-type, a silicon layer whose central part and whose both ends are P-type and whose intermediate parts between said central part and said both ends are intrinsic or a silicon layer whose central part is N-type, whose both ends are P-type and whose intermediate parts between said central part and said both ends are intrinsic, the conductivity type determining impurity concentration of the silicon layer of P-type or N-type used as each of said first and second semiconductor layers is higher than 10.sup.18 cm.sup.-3, said first and second semiconductor layers being a gate electrode of a first insulated gate field-effect transistor and a gate electrode of a second insulated gate field-effect transistor, respectively, said first and second insulated gate field-effect transistors being of the same conductivity type;
and
a voltage detecting circuit for providing a reference voltage which is based on a difference of threshold voltages of said first and second insulated gate field-effect transistors,
wherein said gate electrodes of said first and second insulated gate field-effect transistors are formed on gate insulating films of the same insulating material which are formed on different surface areas of an identical semiconductor substrate, said gate insulating films being of the same insulating material and having the same thickness, and
wherein said gate electrode, a source region and a drain region of each of said first and second insulated gate field-effect transistors are respectively made up of a plurality of gate electrode parts, a plurality of source region parts and a plurality of drain region parts, and said plurality of gate electrode parts are electrically connected in common by a gate interconnection layer, said plurality of source region parts are electrically connected in common by a source interconnection layer and said plurality of drain region parts are electrically connected in common by a drain interconnection layer.

3 more elements

Dependencies are inferred from the claim text.

Reference voltage generator device

Life of this patent

Reference voltage generator device

Life of this patent

Abstract

Claims10