C30B 33/08
Etching
C30B33/08 (Etching) appears on 341 US grants and 504 published applications in this corpus.
Search patents in C30B- Granted patents
- 341
- Published applications
- 504
- Assignees
- 255
- Inventors
- 1,015
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1994 | 1 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 2 | 4 |
| 2003 | 3 | 2 |
| 2004 | 2 | 5 |
| 2005 | 3 | 7 |
| 2006 | 5 | 5 |
| 2007 | 2 | 6 |
| 2008 | 4 | 8 |
| 2009 | 5 | 12 |
| 2010 | 5 | 23 |
| 2011 | 12 | 17 |
| 2012 | 12 | 14 |
| 2013 | 10 | 15 |
| 2014 | 14 | 20 |
| 2015 | 15 | 24 |
| 2016 | 10 | 17 |
| 2017 | 20 | 34 |
| 2018 | 19 | 28 |
| 2019 | 36 | 26 |
| 2020 | 16 | 32 |
| 2021 | 24 | 25 |
| 2022 | 20 | 38 |
| 2023 | 22 | 47 |
| 2024 | 28 | 33 |
| 2025 | 34 | 39 |
| 2026 | 17 | 23 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Method of selectively forming crystalline boron-doped silicon germanium on a surface6 Oct 2026US 12,757,647 B2ASM IP Holding B. V.
- Low etch pit density, low slip line density, and low strain indium phosphide15 Sep 2026US 12,735,808 B2AXT, Inc.
- Method for producing a cyclically stable silicon anode for secondary batteries, and silicon anode for secondary batteries15 Sep 2026US 12,738,476 B2Christian-Albrechts-Universitaet zu Kiel
- Indium phosphide substrate and method for producing indium phosphide substrate15 Sep 2026US 12,740,431 B2JX Advanced Metals Corporation
- Method of forming an epitaxial layer1 Sep 2026US 12,727,402 B2ASM IP Holding B. V.
- Method for preparing perovskite film1 Oct 2026US 2026/0297793 A1National Tsing Hua University
- Method for manufacturing a plurality of polycrystalline silicon carbide substrates1 Oct 2026US 2026/0297806 A1
- Systems and methods for heterogeneous diamond face synthesis for in-situ three-dimensional dopant and structure localization24 Sep 2026US 2026/0286569 A1The University of Chicago
- Fabrication method of high-aspect-ratio double-layer diamond nanostructure17 Sep 2026US 2026/0275574 A1Institute of Physics, Chinese Academy of Sciences
- Gallium nitride single crystal substrate27 Aug 2026US 2026/0250882 A1Sumitomo Chemical Company, Limited
Most cited
By later US patents
- Apparatus and method for surface finishing a silicon film66US 6,489,241 B1APPLIED Materials.Inc. · 2002
- Diamond sensors, detectors, and quantum devices61US 8,758,509 B2Element Six Limited · 2014
- Optical quality diamond material53US 7,740,824 B22010
- Apparatus and method for surface finishing a silicon film52US 6,562,720 B2APPLIED Materials.Inc. · 2003
- Method of fabricating fibres composed of silicon or a silicon-based material and their use in lithium rechargeable batteries47US 8,101,298 B2Nexeon Limited · 2012