C30B 33/10
In solutions or melts
Official title: in solutions or melts
C30B33/10 (In solutions or melts) appears on 140 US grants and 201 published applications in this corpus.
Search patents in C30B- Granted patents
- 140
- Published applications
- 201
- Assignees
- 131
- Inventors
- 457
- Latest grant
- 15 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1994 | 1 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 1 | 0 |
| 2004 | 0 | 1 |
| 2005 | 0 | 3 |
| 2006 | 2 | 3 |
| 2007 | 2 | 3 |
| 2008 | 2 | 5 |
| 2009 | 3 | 7 |
| 2010 | 2 | 8 |
| 2011 | 6 | 8 |
| 2012 | 5 | 5 |
| 2013 | 4 | 6 |
| 2014 | 5 | 7 |
| 2015 | 5 | 12 |
| 2016 | 4 | 9 |
| 2017 | 7 | 16 |
| 2018 | 10 | 12 |
| 2019 | 16 | 10 |
| 2020 | 7 | 12 |
| 2021 | 8 | 8 |
| 2022 | 8 | 13 |
| 2023 | 12 | 22 |
| 2024 | 10 | 11 |
| 2025 | 13 | 13 |
| 2026 | 7 | 7 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Low etch pit density, low slip line density, and low strain indium phosphide15 Sep 2026US 12,735,808 B2AXT, Inc.
- Method for producing a cyclically stable silicon anode for secondary batteries, and silicon anode for secondary batteries15 Sep 2026US 12,738,476 B2Christian-Albrechts-Universitaet zu Kiel
- Indium phosphide substrate and method for producing indium phosphide substrate15 Sep 2026US 12,740,431 B2JX Advanced Metals Corporation
- Substrate and method for its manufacturing7 Jul 2026US 12,673,871 B2Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e. V.
- Lithiation of porous-Si for high performance anode2 Jun 2026US 12,644,202 B2
- Silicon crystal, silicon crystal defect treatment method, and defect characterization method20 Aug 2026US 2026/0242981 A1Shanghai Institute of Microsystem and Info. Tech., Chinese Academy of Sciences
- Method for manufacturing semiconductor device13 Aug 2026US 2026/0239774 A1KYOCERA Corporation
- Gallium arsenide single crystal substrate and method of producing same30 Jul 2026US 2026/0218416 A1Sumitomo Electric Industries, Ltd.
- Aligned growth of low-symmetry transition metal dichalcogenides on high-symmetry surface2 Jul 2026US 2026/0185267 A1
- Method for Micro-Patterning Silicon Carbide Seed Wafer for Crystal Growth14 May 2026US 2026/0136898 A1LEAP Semiconductor Corp.
Most cited
By later US patents
- Process for improving the electrical and optical performance of a transparent electrically conductive material based on silver nanowires33US 9,422,628 B2Commissariat A L' Energie Atomique Et Aux Energies Alternatives · 2016
- Wet etch suitable for creating square cuts in si30US 7,628,932 B2Micron Technology, Inc. · 2009
- Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same28US 7,416,604 B2Sumitomo Electric Industries, Ltd. · 2008
- Method for producing a silicon wafer22US 7,456,106 B2Sumitomo Mitsubishi Silicon Corporation · 2008
- Method of etching a silicon-based material18US 8,585,918 B2Nexeon Limited · 2013