C30B 33/00
After-treatment of single crystals or homogeneous polycrystalline material with defined structure
Official title: After-treatment of single crystals or homogeneous polycrystalline material with defined structure (C30B31/00 takes precedence)
C30B33/00 (After-treatment of single crystals or homogeneous polycrystalline material with defined structure) appears on 2,449 US grants and 2,575 published applications in this corpus.
Search patents in C30B- Granted patents
- 2,449
- Published applications
- 2,575
- Assignees
- 1,068
- Inventors
- 5,511
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 16 | 0 |
| 1977 | 14 | 0 |
| 1978 | 11 | 0 |
| 1979 | 8 | 0 |
| 1980 | 14 | 0 |
| 1981 | 21 | 0 |
| 1982 | 17 | 0 |
| 1983 | 32 | 0 |
| 1984 | 21 | 0 |
| 1985 | 21 | 0 |
| 1986 | 16 | 0 |
| 1987 | 18 | 0 |
| 1988 | 15 | 0 |
| 1989 | 28 | 0 |
| 1990 | 20 | 0 |
| 1991 | 20 | 0 |
| 1992 | 20 | 0 |
| 1993 | 42 | 0 |
| 1994 | 25 | 0 |
| 1995 | 31 | 0 |
| 1996 | 27 | 0 |
| 1997 | 20 | 0 |
| 1998 | 36 | 0 |
| 1999 | 46 | 0 |
| 2000 | 35 | 0 |
| 2001 | 65 | 38 |
| 2002 | 59 | 72 |
| 2003 | 72 | 79 |
| 2004 | 69 | 94 |
| 2005 | 53 | 93 |
| 2006 | 54 | 84 |
| 2007 | 58 | 86 |
| 2008 | 50 | 75 |
| 2009 | 42 | 79 |
| 2010 | 55 | 103 |
| 2011 | 64 | 94 |
| 2012 | 60 | 80 |
| 2013 | 64 | 97 |
| 2014 | 73 | 99 |
| 2015 | 73 | 109 |
| 2016 | 82 | 101 |
| 2017 | 72 | 127 |
| 2018 | 98 | 115 |
| 2019 | 114 | 105 |
| 2020 | 86 | 126 |
| 2021 | 86 | 110 |
| 2022 | 76 | 127 |
| 2023 | 90 | 125 |
| 2024 | 98 | 124 |
| 2025 | 98 | 140 |
| 2026 | 64 | 93 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Method of selectively forming crystalline boron-doped silicon germanium on a surface6 Oct 2026US 12,757,647 B2ASM IP Holding B. V.
- Modeling thermal donor formation and target resistivity for single crystal silicon ingot production22 Sep 2026US 12,742,256 B2GlobalWafers Co., Ltd.
- Bonding optical materials22 Sep 2026US 12,742,998 B2Gamdan Optics, Inc.
- Low etch pit density, low slip line density, and low strain indium phosphide15 Sep 2026US 12,735,808 B2AXT, Inc.
- Method for producing a cyclically stable silicon anode for secondary batteries, and silicon anode for secondary batteries15 Sep 2026US 12,738,476 B2Christian-Albrechts-Universitaet zu Kiel
- Device and method for mist chemical vapor deposition of large-size semiconductor thin film8 Oct 2026US 2026/0308759 A1Tiangong University
- Method for Separating a Layer of Solid Material from a Workpiece8 Oct 2026US 2026/0314345 A1Siltectra GmbH
- Method for preparing perovskite film1 Oct 2026US 2026/0297793 A1National Tsing Hua University
- Gallium base substrate, gallium nitride growth substrate, and manufacturing method of gallium nitride base substrate1 Oct 2026US 2026/0297805 A1Denso Corporation
- Method for manufacturing a plurality of polycrystalline silicon carbide substrates1 Oct 2026US 2026/0297806 A1
Most cited
By later US patents
- LnCuO(S,Se,Te)monocrystalline thin film, its manufacturing method, and optical device or electronic device using the monocrystalline thin film3,969US 7,323,356 B2Japan Science and Technology Agency · 2008
- Method and apparatus for batch processing a semiconductor wafer605US 5,167,716 AGaSonics, Inc. · 1992
- Method and apparatus for achieving spatially uniform externally excited non-thermal chemical reactions554US 4,401,507 AAdvanced Semiconductor Materials/AM. · 1983
- Heat treating apparatus455US 5,464,313 ATokyo Electron Limited · 1995
- Methods for depositing a doped germanium tin semiconductor and related semiconductor device structures421US 10,236,177 B1ASM IP Holding B. V. · 2019