C30B 33/005
Oxydation
Official title: {Oxydation}
C30B33/005 (Oxydation) appears on 158 US grants and 127 published applications in this corpus.
Search patents in C30B- Granted patents
- 158
- Published applications
- 127
- Assignees
- 129
- Inventors
- 451
- Latest grant
- 21 Apr 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 2 | 0 |
| 1978 | 0 | 0 |
| 1979 | 1 | 0 |
| 1980 | 2 | 0 |
| 1981 | 6 | 0 |
| 1982 | 3 | 0 |
| 1983 | 3 | 0 |
| 1984 | 3 | 0 |
| 1985 | 4 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 1 | 0 |
| 1990 | 1 | 0 |
| 1991 | 0 | 0 |
| 1992 | 2 | 0 |
| 1993 | 2 | 0 |
| 1994 | 2 | 0 |
| 1995 | 2 | 0 |
| 1996 | 2 | 0 |
| 1997 | 3 | 0 |
| 1998 | 4 | 0 |
| 1999 | 4 | 0 |
| 2000 | 0 | 0 |
| 2001 | 13 | 10 |
| 2002 | 13 | 10 |
| 2003 | 15 | 8 |
| 2004 | 8 | 10 |
| 2005 | 3 | 10 |
| 2006 | 4 | 3 |
| 2007 | 5 | 6 |
| 2008 | 1 | 4 |
| 2009 | 4 | 1 |
| 2010 | 6 | 10 |
| 2011 | 0 | 5 |
| 2012 | 6 | 1 |
| 2013 | 2 | 2 |
| 2014 | 0 | 4 |
| 2015 | 1 | 2 |
| 2016 | 4 | 3 |
| 2017 | 2 | 7 |
| 2018 | 4 | 1 |
| 2019 | 4 | 2 |
| 2020 | 2 | 4 |
| 2021 | 1 | 5 |
| 2022 | 3 | 1 |
| 2023 | 4 | 5 |
| 2024 | 2 | 4 |
| 2025 | 0 | 6 |
| 2026 | 3 | 3 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Method for manufacturing epitaxial substrate by irradiating a surface of a group iii nitride semiconductor layer with ultraviolet light in an atmosphere containing oxygen21 Apr 2026US 12,606,933 B2Sumitomo Electric Device Innovations, Inc.
- Methods of manufacturing semiconductor devices and semiconductor devices24 Mar 2026US 12,588,445 B2Semiconductor Components Industries, LLC
- Preparation method of aluminum nitride composite structure based on two-dimensional (2D) crystal transition layer17 Feb 2026US 12,553,148 B2Peking University
- Gate all around I/O engineering5 Mar 2024US 11,923,441 B2APPLIED Materials.Inc.
- Gallium arsenide single crystal substrate and method for producing gallium arsenide single crystal substrate6 Feb 2024US 11,891,720 B2Sumitomo Electric Industries, Ltd.
- Gallium arsenide single crystal substrate and method of producing same16 Apr 2026US 2026/0103823 A1Sumitomo Electric Industries, Ltd.
- Particle manufacturing method and particle manufacturing device19 Feb 2026US 2026/0049415 A1Korea Advanced Institute of Science and Technology
- Composite comprising gallium nitride and diamond and production method for same15 Jan 2026US 2026/0018423 A1National Institute of Advanced Industrial Science and Technology
- Silicon carbide single crystal substrate processing method, and silicon carbide single crystal substrate processing system18 Dec 2025US 2025/0382724 A1Tokyo Ohka Kogyo.Co., Ltd.
- Processing method for silicon carbide single crystal substrate, silicon carbide single crystal substrate processing system, and replenishing liquid4 Dec 2025US 2025/0369155 A1Tokyo Ohka Kogyo.Co., Ltd.
Most cited
By later US patents
- Method and apparatus for batch processing a semiconductor wafer605US 5,167,716 AGaSonics, Inc. · 1992
- Method and apparatus for achieving spatially uniform externally excited non-thermal chemical reactions554US 4,401,507 AAdvanced Semiconductor Materials/AM. · 1983
- Method for growing thin silicon oxides on a silicon substrate using chlorine precursors349US 6,387,827 B1ASM International N.V. · 2002
- In-situ post epitaxial treatment process232US 6,808,564 B2SEH America, Inc. · 2004
- Semiconductor fabricating apparatus103US 4,558,660 AHandotai Kenkyu Shinkokai · 1985