Methods of manufacturing semiconductor devices and semiconductor devices

A method of manufacturing a semiconductor device, comprising:

• providing a semiconductor substrate comprising an unpolished CZ silicon substrate, a substrate upper side, and a substrate lower side opposite to the substrate upper side;
• first annealing the semiconductor substrate at a first temperature in an inert environment for a first time;
• second annealing the semiconductor substrate at a second temperature in a wet oxidation environment for a second time;
• polishing the semiconductor substrate after the second annealing, wherein the polishing comprises removing about 15 microns of material from the substrate upper side;
• and
• before forming the semiconductor device, thinning the semiconductor substrate to a thickness of about 100 microns or less from the substrate lower side;
• wherein the first annealing comprises:
• using in an inert environment comprising argon;
• first annealing with the first temperature being at least 1220 degrees Celsius;
• and
• first annealing with the first time between about 30 minutes to about 60 minutes;
• and
• wherein the second annealing comprises:
• second annealing with the second temperature in a range from about 1230 degrees Celsius to about 1260 degrees Celsius;
• and
• second annealing with the second time between about one (1) hour and about three (3) hours.