C30B 33/06
Joining of crystals
C30B33/06 (Joining of crystals) appears on 361 US grants and 527 published applications in this corpus.
Search patents in C30B- Granted patents
- 361
- Published applications
- 527
- Assignees
- 215
- Inventors
- 860
- Latest grant
- 22 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 1 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 1 | 0 |
| 2000 | 3 | 0 |
| 2001 | 2 | 1 |
| 2002 | 2 | 3 |
| 2003 | 5 | 2 |
| 2004 | 3 | 2 |
| 2005 | 1 | 4 |
| 2006 | 2 | 4 |
| 2007 | 2 | 5 |
| 2008 | 2 | 5 |
| 2009 | 3 | 9 |
| 2010 | 3 | 14 |
| 2011 | 8 | 15 |
| 2012 | 12 | 25 |
| 2013 | 9 | 25 |
| 2014 | 11 | 24 |
| 2015 | 17 | 32 |
| 2016 | 23 | 32 |
| 2017 | 17 | 29 |
| 2018 | 26 | 26 |
| 2019 | 33 | 32 |
| 2020 | 33 | 33 |
| 2021 | 25 | 35 |
| 2022 | 30 | 29 |
| 2023 | 20 | 34 |
| 2024 | 27 | 43 |
| 2025 | 24 | 37 |
| 2026 | 15 | 27 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Bonding optical materials22 Sep 2026US 12,742,998 B2Gamdan Optics, Inc.
- Polycrystalline SIC article21 Jul 2026US 12,686,944 B2Tokai Carbon Co., Ltd.
- Method for producing a layer of solid material21 Jul 2026US 12,690,429 B2Siltectra GmbH
- Method of producing large GaAs and GaP infrared windows9 Jun 2026US 12,650,538 B2BAE Systems Information and Electronic Systems Integration Inc.
- Seed substrate for epitaxial growth use and method for manufacturing same, and semiconductor substrate and method for manufacturing same5 May 2026US 12,618,172 B2Shin-Etsu Chemical Co., Ltd.
- Method for Separating a Layer of Solid Material from a Workpiece8 Oct 2026US 2026/0314345 A1Siltectra GmbH
- Substrate for sic semiconductor devices, sic bonded substrate, sic polycrystalline substrate, and method for producing sic polycrystalline substrate1 Oct 2026US 2026/0305193 A1Sumitomo Metal Mining Co., Ltd.
- Composite structure comprising a monocrystalline thin film on a polycrystalline silicon carbide support substrate, and associated manufacturing method17 Sep 2026US 2026/0275572 A1
- Method for manufacturing a crystalline silicon carbide (sic)-based device27 Aug 2026US 2026/0255933 A1Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Composite substrates for the epitaxial growth of thin films and method for fabricating such substrates20 Aug 2026US 2026/0242982 A1Max-Planck-Gesellschaft Zur FöRderung Der Wissenschaften E. V.
Most cited
By later US patents
- Method of making mosaic array of thin semiconductor material of large substrates171US 6,562,127 B1The United States of America as represented by the Secretary of the Navy · 2003
- Nitride crystal with removable surface layer and methods of manufacture117US 8,148,801 B2Soraa, Inc. · 2012
- Nitride crystal with removable surface layer and methods of manufacture64US 8,329,511 B2Soraa, Inc. · 2012
- Heterointegration of materials using deposition and bonding61US 6,602,613 B1AmberWave Systems Corporation · 2003
- Palladium welding of a semiconductor body58US 5,262,347 ABell Communications Research, Inc. · 1993