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US 12,686,944 B2Granted
Polycrystalline SIC article
AssigneeTokai Carbon Co., Ltd.
InventorsYuji Ushijima, Takaomi Sugihara, Seiichi Okuyama
Life of this patent
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Abstract
Provided is a polycrystalline SiC molded body wherein the resistivity is not more than 0.050 Ωcm and, when the peak strength in a wave number range of 760-780 cm−1 in a Raman spectrum is regarded as “A” and the peak strength in a wave number range of 790-800 cm−1 in the Raman spectrum is regarded as “B”, then the peak ratio (A/B) is not more than 0.100.
Claims4
A polycrystalline SiC article formed by a CVD method and having:
- a resistivity of 0.050 Ω·cm or less, and a peak ratio (A/B) of 0.015 to 0.100,
- wherein “A” is a peak indicating a stacking fault of the polycrystalline SiC material and represents a peak intensity within a wave number range of 760 to 780 cm−1 in a Raman spectrum of the polycrystalline SiC article, and
- “B” is a peak indicating β-SiC and represents a peak intensity within a wave number range of 790 to 800 cm−1 in the Raman spectrum of the polycrystalline SiC article.
Dependencies are inferred from the claim text.