Palladium welding of a semiconductor body
AssigneeBell Communications Research, Inc.
InventorTimothy D. Sands
Life of this patent
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Abstract
A method of bonding together two dissimilar planar bodies, one of which is a semiconductor. A film of palladium is deposited on one of the bodies. The two bodies are pressed together with moderate force with the palladium in between. The palladium chemically reacts with the semiconductor and, at least in the case of GaAs, dissolves the surface oxide and forms a crystalline palladium/semiconductor product topotaxial with the semiconductor.
Claims12
A method of bonding two bodies, comprising the steps of:
- depositing a planar layer comprising palladium on a first surface portion of a first body;
- and
- pressing a second surface of a second surface portion of a second body on said planar layer, wherein said second surface and said planar layer are pressed into adjacent contact and wherein at least a first one of said first and second surface portions comprises a semiconductor comprising gallium and arsenic.
A method of bonding two bodies, comprising the steps of:
- depositing a planar layer comprising palladium on a first surface portion of a first body;
- and
- pressing a second surface of a second surface portion on a second body on said planar layer, wherein said second surface and said planar layer are pressed into adjacent contact and wherein at least a first one of said first and second surface portions comprises a semiconductor comprising indium and phosphorous.
A method of bonding together two bodies, comprising the steps of:
- depositing a planar layer comprising palladium on a first surface of a first body comprising a first semiconductor;
- and
- pressing a second surface of a second body comprising a second semiconductor on said planar layer,
- a first one of said bodies comprising silicon and a second one of said bodies comprising a compound semiconductor.
A method of bonding together two bodies of dissimilar material, at least one of said bodies being a semiconductor, comprising the steps of
- interposing a thin film planar layer of palladium between two opposing surfaces of said bodies, and
- causing the oxides on the surface of said one body that is a semiconductor to disperse and said semiconductor to react with the palladium layer, said causing step comprising
- pressing said two bodies so that the palladium layer is in intimate contact with the semiconductor surface and annealing said two bodies being pressed together at a temperature between 200.degree. and 600.degree. C. to bond the semiconductor surface to the palladium layer.
A method of bonding together two bodies comprising the steps of:
- depositing a thin film planar layer of palladium on a surface of one of said bodies, and
- pressing a surface of the other of said bodies on said planar layer, said other of said bodies comprising a III-V semiconductor, to disperse the oxide of the semiconductor on the surface of said other body and to react with the semiconductor to form a bonding region.
Dependencies are inferred from the claim text.