Composite structure comprising a monocrystalline thin film on a polycrystalline silicon carbide support substrate, and associated manufacturing method
OwnerHugo Biard, Alexandre Potier +2inventors
InventorsHugo Biard, Alexandre Potier, Marc Ferrato, Pablo Lefevre
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Abstract
A composite structure for manufacturing microelectronic components comprises a monocrystalline thin film disposed on a support substrate of polycrystalline silicon carbide, the support substrate having a preferred crystalline orientation, in which: a C422 texture coefficient is less than 30%; and a C220 texture coefficient is greater than 60% or the sum of the C111+C222+C511 texture coefficients is greater than 70%. A method is used for manufacturing such a composite structure.
Claims20
A composite structure for manufacturing microelectronic components, comprising a thin single-crystal layer disposed on a support substrate of polycrystalline silicon carbide, the support substrate having a crystalline orientation, in which:
- a C422 texture coefficient is less than 30%;
- and
- a C220 texture coefficient is greater than 60% or the sum of the C111+C222+C511 texture coefficients is greater than 70%.
A method for manufacturing a composite structure comprising a thin single-crystal layer disposed on a support substrate of polycrystalline silicon carbide, the method comprising the following steps:
- a) providing a support substrate of polycrystalline silicon carbide having a crystalline orientation, in which:
- a C422 texture coefficient is less than 30%;
- and
- a C220 texture coefficient is greater than 60% or the sum of the C111+C222+C511 texture coefficients is greater than 70%;
- b) providing a donor substrate of a single-crystal material;
- and
- c) transferring a thin layer originating from the donor substrate onto the support substrate.
Dependencies are inferred from the claim text.