Aligned growth of low-symmetry transition metal dichalcogenides on high-symmetry surface

Abstract

A method of growing low-symmetry two-dimensional (2D) transition metal dichalcogenide (TMD) on a high-symmetry surface includes: (a) placing precursors of a low-symmetry 2D TMD and a gold foil with Au (111) domain in a chamber having a first zone and a second zone, in which the precursors of the low-symmetry 2D TMD are placed in the first zone while the gold foil with Au (111) domain is placed in the second zone; (b) respectively raising the temperature in the first and second zones to 250° C. and 950° C. within 30 minutes in the presence of an inert gas; and (c) maintaining the temperature in the second zone at 950° C. for 2-5 minutes to allow aligned growth of the low-symmetry 2D TMD on the gold foil with Au (111) domain thereby forming the film of low-symmetry 2D TMD. The film produced has about 98% of a unidirectional ratio of triangular-shaped 2D TMD.

Dependencies are inferred from the claim text.