Back to results
US 2026/0250882 A1Published application
Gallium nitride single crystal substrate
AssigneeSumitomo Chemical Company, Limited
InventorsSeiji SARAYAMA, Toshio KITAMURA
Life of this patent
Estimating the term…
Abstract
A gallium nitride single crystal substrate, that is a gallium nitride single crystal substrate having a diameter of 50 mm or more and two main surfaces facing in opposite directions, wherein when light having a wavelength of 532 nm is incident perpendicularly to one of the main surfaces, light diffusion transmittance Rd, which is a value obtained by dividing an intensity of diffused transmitted light by an intensity of total transmitted light, satisfies Rd<0.000791.
Claims5
A gallium nitride single crystal substrate,
- that is a gallium nitride single crystal substrate having a diameter of 50 mm or more and two main surfaces facing in opposite directions,
- wherein when light having a wavelength of 532 nm is incident perpendicularly to one of the main surfaces, light diffusion transmittance Rd, which is a value obtained by dividing an intensity of diffused transmitted light by an intensity of total transmitted light, satisfies Rd<0.000791.
A gallium nitride single crystal substrate,
- that is a gallium nitride single crystal substrate having a diameter of 50 mm or more and two main surfaces facing in opposite directions,
- wherein when light is incident perpendicularly to one of the main surfaces using a spectrophotometer, at least one wavelength λ of incident light is in a range of 390 nm or more and 600 nm or less, at which light diffusion transmittance Rd, which is a value obtained by dividing an intensity of diffused transmitted light by an intensity of total transmitted light, satisfies the following formula (1):
- Rd
- <
- a
- ×
- b
- 2
- ÷
- (
- c
- ×
- (
- λ
- -
- λ
- 0
- )
- 2
- +
- b
- 2
- )
- +
- d
- (
- 1
- )
- [In formula (1), a=10, b=1.2, c=2.5, d=0.00065, λ is a wavelength (nm) of the incident light, and λ0=330.]
26 more elements
Dependencies are inferred from the claim text.