C30B 33/12
In gas atmosphere or plasma
Official title: in gas atmosphere or plasma
C30B33/12 (In gas atmosphere or plasma) appears on 113 US grants and 184 published applications in this corpus.
Search patents in C30B- Granted patents
- 113
- Published applications
- 184
- Assignees
- 99
- Inventors
- 399
- Latest grant
- 1 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2002 | 2 | 4 |
| 2003 | 2 | 1 |
| 2004 | 2 | 4 |
| 2005 | 2 | 3 |
| 2006 | 3 | 1 |
| 2007 | 0 | 2 |
| 2008 | 1 | 2 |
| 2009 | 0 | 4 |
| 2010 | 3 | 10 |
| 2011 | 6 | 7 |
| 2012 | 4 | 4 |
| 2013 | 4 | 3 |
| 2014 | 3 | 7 |
| 2015 | 6 | 8 |
| 2016 | 3 | 5 |
| 2017 | 7 | 13 |
| 2018 | 9 | 14 |
| 2019 | 13 | 6 |
| 2020 | 4 | 13 |
| 2021 | 7 | 11 |
| 2022 | 5 | 13 |
| 2023 | 3 | 12 |
| 2024 | 8 | 12 |
| 2025 | 11 | 16 |
| 2026 | 5 | 9 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Method of forming an epitaxial layer1 Sep 2026US 12,727,402 B2ASM IP Holding B. V.
- Carbon-containing cap layer for doped semiconductor epitaxial layer4 Aug 2026US 12,701,762 B2APPLIED Materials.Inc.
- Methods of forming superlattice structures using nanoparticles14 Jul 2026US 12,685,041 B2ASM IP Holding B. V.
- Substrate and method for its manufacturing7 Jul 2026US 12,673,871 B2Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e. V.
- Method for measuring etching amount, and measurement system therefor10 Mar 2026US 12,571,626 B2Kwansei Gakuin Educational Foundation
- Method for preparing perovskite film1 Oct 2026US 2026/0297793 A1National Tsing Hua University
- Systems and methods for heterogeneous diamond face synthesis for in-situ three-dimensional dopant and structure localization24 Sep 2026US 2026/0286569 A1The University of Chicago
- Fabrication method of high-aspect-ratio double-layer diamond nanostructure17 Sep 2026US 2026/0275574 A1Institute of Physics, Chinese Academy of Sciences
- Semiconductor wafer providing method and semiconductor wafer providing system21 May 2026US 2026/0139407 A1NGK Insulators, Ltd.
- Plasma assisted remediation of single crystal diamond surfaces30 Apr 2026US 2026/0120997 A1The Government of the United States of America, as represented by the Secretary of the Navy
Most cited
By later US patents
- Apparatus and method for surface finishing a silicon film66US 6,489,241 B1APPLIED Materials.Inc. · 2002
- Optical quality diamond material53US 7,740,824 B22010
- Apparatus and method for surface finishing a silicon film52US 6,562,720 B2APPLIED Materials.Inc. · 2003
- In situ growth of oxide and silicon layers23US 6,749,687 B1ASM America, Inc. · 2004
- Film removal employing a remote plasma source14US 6,436,303 B1APPLIED Materials.Inc. · 2002