C30B 29/52
Alloys
C30B29/52 (Alloys) appears on 685 US grants and 660 published applications in this corpus.
Search patents in C30B- Granted patents
- 685
- Published applications
- 660
- Assignees
- 376
- Inventors
- 1,721
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 3 | 0 |
| 1977 | 2 | 0 |
| 1978 | 3 | 0 |
| 1979 | 5 | 0 |
| 1980 | 3 | 0 |
| 1981 | 4 | 0 |
| 1982 | 6 | 0 |
| 1983 | 6 | 0 |
| 1984 | 10 | 0 |
| 1985 | 17 | 0 |
| 1986 | 12 | 0 |
| 1987 | 7 | 0 |
| 1988 | 12 | 0 |
| 1989 | 11 | 0 |
| 1990 | 9 | 0 |
| 1991 | 10 | 0 |
| 1992 | 8 | 0 |
| 1993 | 7 | 0 |
| 1994 | 10 | 0 |
| 1995 | 4 | 0 |
| 1996 | 5 | 0 |
| 1997 | 11 | 0 |
| 1998 | 6 | 0 |
| 1999 | 12 | 0 |
| 2000 | 5 | 0 |
| 2001 | 11 | 5 |
| 2002 | 14 | 13 |
| 2003 | 20 | 24 |
| 2004 | 13 | 32 |
| 2005 | 21 | 44 |
| 2006 | 21 | 22 |
| 2007 | 20 | 22 |
| 2008 | 19 | 23 |
| 2009 | 14 | 30 |
| 2010 | 23 | 21 |
| 2011 | 12 | 28 |
| 2012 | 17 | 25 |
| 2013 | 20 | 26 |
| 2014 | 25 | 25 |
| 2015 | 14 | 27 |
| 2016 | 26 | 36 |
| 2017 | 19 | 33 |
| 2018 | 15 | 18 |
| 2019 | 24 | 19 |
| 2020 | 19 | 31 |
| 2021 | 19 | 28 |
| 2022 | 28 | 36 |
| 2023 | 13 | 29 |
| 2024 | 33 | 27 |
| 2025 | 24 | 24 |
| 2026 | 13 | 12 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Method of selectively forming crystalline boron-doped silicon germanium on a surface6 Oct 2026US 12,757,647 B2ASM IP Holding B. V.
- Method of forming an epitaxial layer1 Sep 2026US 12,727,402 B2ASM IP Holding B. V.
- Carbon-containing cap layer for doped semiconductor epitaxial layer4 Aug 2026US 12,701,762 B2APPLIED Materials.Inc.
- Methods of forming superlattice structures using nanoparticles14 Jul 2026US 12,685,041 B2ASM IP Holding B. V.
- Permanent magnet alloys for gap magnets30 Jun 2026US 12,668,864 B2Iowa State University Research Foundation, Inc.
- Film forming method and film forming apparatus10 Sep 2026US 2026/0265949 A1Tokyo Electron Limited
- Single crystal quantum dots sers chip13 Aug 2026US 2026/0235521 A1National University of Singapore
- Manufacturing method for semiconductor device using epitaxy process and apparatus for the same4 Jun 2026US 2026/0152871 A1Viatron Technologies Inc.
- High Temperature Combustor and Vane Alloy9 Apr 2026US 2026/0098324 A1Rtx Corporation
- Method for forming an epitaxial structure onto a substrate and substrate processing apparatus2 Apr 2026US 2026/0092399 A1ASM IP Holding B. V.
Most cited
By later US patents
- Atomic layer epitaxy (ALE) apparatus for growing thin films of elemental semiconductors721US 5,281,274 AThe United States of America as represented by the Secretary of the Navy · 1994
- Apparatus for and a method of growing thin films of elemental semiconductors671US 5,225,366 AThe United States of America as represented by the Secretary of the Navy · 1993
- Method for preparing Ge1-x-ySnxEy (E=P, As, Sb) semiconductors and related Si-Ge-Sn-E and Si-Ge-E analogs539US 7,238,596 B2Arizona Board of Regenta, a body corporate of the State of Arizona acting for and on behalf of Arizona State University · 2007
- Methods of forming films including germanium tin and structures and devices including the films500US 9,396,934 B2ASM IP Holding B. V. · 2016
- Methods of forming highly p-type doped germanium tin films and structures and devices including the films484US 9,647,114 B2ASM IP Holding B. V. · 2017